DTC114EET1G
- Mfr.Part #
- DTC114EET1G
- Manufacturer
- onsemi
- Package / Case
- SC-75, SOT-416
- Datasheet
- Download
- Description
- TRANS PREBIAS NPN 50V 100MA SC75
- Stock
- 11,749
- In Stock :
- 11,749
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single, Pre-Biased
- Current Rating :
- 70mA
- Packaging :
- Tape and Reel (TR)
- Resistor - Emitter Base (R2) :
- 10 k Ω
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Max Collector Current :
- 100mA
- Operating Supply Voltage :
- 50V
- Collector Emitter Breakdown Voltage :
- 50V
- Current - Collector Cutoff (Max) :
- 500nA
- Width :
- 800μm
- Number of Pins :
- 3
- Halogen Free :
- Halogen Free
- Max Power Dissipation :
- 200mW
- Max Operating Temperature :
- 150°C
- Lead Free :
- Lead Free
- Terminal Position :
- Dual
- Length :
- 1.6mm
- Pin Count :
- 3
- Polarity :
- NPN
- Factory Lead Time :
- 8 Weeks
- Terminal Form :
- Gull wing
- Continuous Collector Current :
- 100mA
- Base Part Number :
- DTC114
- Contact Plating :
- Tin
- Lifecycle Status :
- ACTIVE (Last Updated: 22 hours ago)
- Max Breakdown Voltage :
- 50V
- Max Output Current :
- 100mA
- Additional Feature :
- BUILT-IN BIAS RESISTOR RATIO IS 1
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Peak Reflow Temperature (Cel) :
- 260
- Mounting Type :
- Surface Mount
- ECCN Code :
- EAR99
- Resistor - Base (R1) :
- 10 k Ω
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 300μA, 10mA
- RoHS Status :
- ROHS3 Compliant
- hFE Min :
- 35
- Number of Terminations :
- 3
- Pbfree Code :
- yes
- Element Configuration :
- Single
- Collector Emitter Saturation Voltage :
- 250mV
- Published :
- 2006
- Surface Mount :
- yes
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 35 @ 5mA 10V
- Transistor Application :
- SWITCHING
- REACH SVHC :
- No SVHC
- Output Voltage :
- 300mV
- Collector Emitter Voltage (VCEO) :
- 50V
- Package / Case :
- SC-75, SOT-416
- Voltage - Rated DC :
- 50V
- Number of Elements :
- 1
- Transistor Type :
- NPN - Pre-Biased
- Min Operating Temperature :
- -55°C
- Height :
- 750μm
- JESD-609 Code :
- e3
- Datasheets
- DTC114EET1G

DTC114EET1G datasheet pdf and Transistors - Bipolar (BJT) - Single, Pre-Biased product details from ON Semiconductor stock available at
DTC114EET1G Description
The DTC114EET1G is an NPN Bipolar Digital Transistor (BRT) designed to replace a single device and its external resistor bias network.
DTC114EET1G Features
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
DTC114EET1G Applications
-
Power Management
-
Consumer Electronics
-
Portable Devices
-
Industrial
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