DSS60600MZ4-13
- Mfr.Part #
- DSS60600MZ4-13
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 60V 6A SOT223-3
- Stock
- 38,402
- In Stock :
- 38,402
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Saturation Voltage :
- 350mV
- Base Part Number :
- DSS60600
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Frequency :
- 100MHz
- RoHS Status :
- ROHS3 Compliant
- Polarity/Channel Type :
- PNP
- Pbfree Code :
- yes
- Transistor Type :
- PNP
- Number of Pins :
- 3
- Mount :
- Surface Mount
- hFE Min :
- 120
- JESD-609 Code :
- e3
- Collector Emitter Voltage (VCEO) :
- 60V
- REACH SVHC :
- No SVHC
- Lead Free :
- Lead Free
- Height :
- 1.6mm
- Max Power Dissipation :
- 1.2W
- ECCN Code :
- EAR99
- Gain Bandwidth Product :
- 100MHz
- Transistor Application :
- SWITCHING
- JESD-30 Code :
- R-PDSO-G4
- Package / Case :
- TO-261-4, TO-261AA
- Published :
- 2008
- Transition Frequency :
- 100MHz
- Collector Base Voltage (VCBO) :
- 100V
- Weight :
- 7.994566mg
- Terminal Finish :
- Matte Tin (Sn)
- Termination :
- SMD/SMT
- Time@Peak Reflow Temperature-Max (s) :
- 40
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 1A 2V
- Width :
- 3.5mm
- Emitter Base Voltage (VEBO) :
- 6V
- Power Dissipation :
- 2W
- Number of Elements :
- 1
- Max Breakdown Voltage :
- 60V
- Collector Emitter Breakdown Voltage :
- 60V
- Factory Lead Time :
- 15 Weeks
- Terminal Position :
- Dual
- Terminal Form :
- Gull wing
- Mounting Type :
- Surface Mount
- Power - Max :
- 1.2W
- Radiation Hardening :
- No
- Pin Count :
- 4
- Max Collector Current :
- 6A
- Transistor Element Material :
- SILICON
- Length :
- 6.5mm
- Element Configuration :
- Single
- Number of Terminations :
- 4
- Peak Reflow Temperature (Cel) :
- 260
- Packaging :
- Tape and Reel (TR)
- Operating Temperature :
- -55°C~150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vce Saturation (Max) @ Ib, Ic :
- 350mV @ 600mA, 6A
- Case Connection :
- COLLECTOR
- Datasheets
- DSS60600MZ4-13
DSS60600MZ4-13 Documents

PNP -55°C~150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
DSS60600MZ4-13 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 120 @ 1A 2V.The collector emitter saturation voltage is 350mV, which allows for maximum design flexibility.When VCE saturation is 350mV @ 600mA, 6A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.In the part, the transition frequency is 100MHz.This device can take an input voltage of 60V volts before it breaks down.A maximum collector current of 6A volts can be achieved.
DSS60600MZ4-13 Features
the DC current gain for this device is 120 @ 1A 2V
a collector emitter saturation voltage of 350mV
the vce saturation(Max) is 350mV @ 600mA, 6A
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
DSS60600MZ4-13 Applications
There are a lot of Diodes Incorporated
DSS60600MZ4-13 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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