DSS60600MZ4-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

hFE Min :

120

Terminal Form :

Gull wing

Power Dissipation :

2W

Emitter Base Voltage (VEBO) :

6V

Packaging :

Tape and Reel (TR)

Height :

1.6mm

JESD-609 Code :

e3

Pbfree Code :

yes

Case Connection :

COLLECTOR

ECCN Code :

EAR99

REACH SVHC :

No SVHC

Terminal Position :

Dual

Peak Reflow Temperature (Cel) :

260

Mount :

Surface Mount

Length :

6.5mm

Vce Saturation (Max) @ Ib, Ic :

350mV @ 600mA, 6A

Collector Emitter Voltage (VCEO) :

60V

Terminal Finish :

Matte Tin (Sn)

Transition Frequency :

100MHz

Transistor Element Material :

SILICON

Weight :

7.994566mg

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 1A 2V

Number of Pins :

3

Width :

3.5mm

Lead Free :

Lead Free

Current - Collector Cutoff (Max) :

100nA ICBO

Polarity/Channel Type :

PNP

Max Power Dissipation :

1.2W

Gain Bandwidth Product :

100MHz

Base Part Number :

DSS60600

Factory Lead Time :

15 Weeks

RoHS Status :

ROHS3 Compliant

Collector Emitter Breakdown Voltage :

60V

Max Breakdown Voltage :

60V

Radiation Hardening :

No

Mounting Type :

Surface Mount

Max Collector Current :

6A

Transistor Type :

PNP

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Termination :

SMD/SMT

Pin Count :

4

Time@Peak Reflow Temperature-Max (s) :

40

Collector Base Voltage (VCBO) :

100V

Number of Elements :

1

Power - Max :

1.2W

Element Configuration :

Single

Collector Emitter Saturation Voltage :

350mV

Transistor Application :

SWITCHING

JESD-30 Code :

R-PDSO-G4

Frequency :

100MHz

Number of Terminations :

4

Package / Case :

TO-261-4, TO-261AA

Published :

2008