DSS60600MZ4-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Terminal Position :

Dual

Terminal Form :

Gull wing

Time@Peak Reflow Temperature-Max (s) :

40

Power Dissipation :

2W

Terminal Finish :

Matte Tin (Sn)

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 1A 2V

JESD-30 Code :

R-PDSO-G4

Number of Terminations :

4

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Published :

2008

Polarity/Channel Type :

PNP

Package / Case :

TO-261-4, TO-261AA

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Peak Reflow Temperature (Cel) :

260

Pin Count :

4

Vce Saturation (Max) @ Ib, Ic :

350mV @ 600mA, 6A

Frequency :

100MHz

Max Power Dissipation :

1.2W

Base Part Number :

DSS60600

Number of Pins :

3

Weight :

7.994566mg

JESD-609 Code :

e3

ECCN Code :

EAR99

REACH SVHC :

No SVHC

Collector Emitter Voltage (VCEO) :

60V

Max Breakdown Voltage :

60V

Collector Emitter Breakdown Voltage :

60V

Case Connection :

COLLECTOR

Gain Bandwidth Product :

100MHz

Lead Free :

Lead Free

Number of Elements :

1

Emitter Base Voltage (VEBO) :

6V

Element Configuration :

Single

Length :

6.5mm

Transistor Type :

PNP

Collector Base Voltage (VCBO) :

100V

Transition Frequency :

100MHz

Transistor Application :

SWITCHING

hFE Min :

120

Mounting Type :

Surface Mount

Max Collector Current :

6A

Current - Collector Cutoff (Max) :

100nA ICBO

Width :

3.5mm

Mount :

Surface Mount

Termination :

SMD/SMT

Operating Temperature :

-55°C~150°C TJ

Radiation Hardening :

No

Power - Max :

1.2W

Collector Emitter Saturation Voltage :

350mV

Height :

1.6mm

Packaging :

Tape and Reel (TR)

Factory Lead Time :

15 Weeks