DSS60601MZ4-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Mounting Type :

Surface Mount

Pbfree Code :

yes

Frequency :

100MHz

Transistor Element Material :

SILICON

Radiation Hardening :

No

hFE Min :

150

Peak Reflow Temperature (Cel) :

260

Collector Emitter Breakdown Voltage :

60V

Lead Free :

Lead Free

Number of Elements :

1

JESD-30 Code :

R-PDSO-G4

Power Dissipation :

1.2W

REACH SVHC :

No SVHC

Element Configuration :

Single

Factory Lead Time :

15 Weeks

Number of Pins :

3

Time@Peak Reflow Temperature-Max (s) :

40

Termination :

SMD/SMT

Width :

3.5mm

Transistor Application :

SWITCHING

Vce Saturation (Max) @ Ib, Ic :

300mV @ 600mA, 6A

Max Power Dissipation :

1.2W

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 1A 2V

Polarity/Channel Type :

NPN

Length :

6.5mm

Terminal Position :

Dual

Transistor Type :

NPN

Case Connection :

COLLECTOR

Operating Temperature :

-55°C~150°C TJ

Max Collector Current :

6A

Terminal Form :

Gull wing

ECCN Code :

EAR99

Transition Frequency :

100MHz

Collector Emitter Voltage (VCEO) :

60V

Emitter Base Voltage (VEBO) :

6V

Base Part Number :

DSS60601

Gain Bandwidth Product :

100MHz

Number of Terminations :

4

Mount :

Surface Mount

Terminal Finish :

Matte Tin (Sn)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Collector Cutoff (Max) :

100nA ICBO

Collector Base Voltage (VCBO) :

100V

JESD-609 Code :

e3

Published :

2012

Height :

1.6mm

Package / Case :

TO-261-4, TO-261AA

Pin Count :

4

Max Breakdown Voltage :

60V

Collector Emitter Saturation Voltage :

300mV

RoHS Status :

ROHS3 Compliant

Weight :

7.994566mg

Packaging :

Tape and Reel (TR)