DSS2540M-7B
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- Mfr.Part #
- DSS2540M-7B
- Manufacturer
- Diodes Incorporated
- Package / Case
- 3-UFDFN
- Datasheet
- Download
- Description
- TRANS NPN 40V 0.5A 3DFN
- Stock
- 170,202
- In Stock ：
- 170,202
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Packaging :
- Tape and Reel (TR)
- Factory Lead Time :
- 15 Weeks
- Transistor Type :
- NPN
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Emitter Base Voltage (VEBO) :
- 6V
- Pbfree Code :
- yes
- JESD-609 Code :
- e4
- Number of Terminations :
- 3
- Peak Reflow Temperature (Cel) :
- 260
- Collector Base Voltage (VCBO) :
- 40V
- Polarity/Channel Type :
- NPN
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Operating Temperature :
- -55°C~150°C TJ
- Mount :
- Surface Mount
- Transistor Element Material :
- SILICON
- Frequency :
- 300MHz
- Number of Pins :
- 3
- Collector Emitter Breakdown Voltage :
- 40V
- Number of Elements :
- 1
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 150 @ 100mA 2V
- Transition Frequency :
- 300MHz
- Power Dissipation :
- 250mW
- Pin Count :
- 3
- Mounting Type :
- Surface Mount
- Published :
- 2015
- RoHS Status :
- ROHS3 Compliant
- Case Connection :
- COLLECTOR
- REACH SVHC :
- No SVHC
- Max Power Dissipation :
- 250mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Collector Current :
- 500mA
- Gain Bandwidth Product :
- 300MHz
- Continuous Collector Current :
- 500mA
- Collector Emitter Saturation Voltage :
- 250mV
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 50mA, 500mA
- Terminal Position :
- BOTTOM
- Package / Case :
- 3-UFDFN
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Base Part Number :
- DSS2540M
- Max Breakdown Voltage :
- 40V
- Collector Emitter Voltage (VCEO) :
- 40V
- Radiation Hardening :
- No
- ECCN Code :
- EAR99
- Element Configuration :
- Single
- Datasheets
- DSS2540M-7B
DSS2540M-7B Documents
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN 3-UFDFN Tape & Reel (TR) Surface Mount
DSS2540M-7B Overview
DC current gain in this device equals 150 @ 100mA 2V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 250mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 250mV @ 50mA, 500mA.Single BJT transistor is essential to maintain the continuous collector voltage at 500mA to achieve high efficiency.An emitter's base voltage can be kept at 6V to gain high efficiency.As a result, the part has a transition frequency of 300MHz.Breakdown input voltage is 40V volts.In extreme cases, the collector current can be as low as 500mA volts.
DSS2540M-7B Features
the DC current gain for this device is 150 @ 100mA 2V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 50mA, 500mA
the emitter base voltage is kept at 6V
a transition frequency of 300MHz
DSS2540M-7B Applications
There are a lot of Diodes Incorporated
DSS2540M-7B applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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