DSS2540M-7B

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Mfr.Part #
DSS2540M-7B
Manufacturer
Diodes Incorporated
Package / Case
3-UFDFN
Datasheet
Download
Description
TRANS NPN 40V 0.5A 3DFN
Stock
170,202
In Stock :
170,202

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Manufacturer :
Diodes Incorporated
Product Category :
Transistors - Bipolar (BJT) - Single
REACH SVHC :
No SVHC
Max Collector Current :
500mA
Element Configuration :
Single
Mounting Type :
Surface Mount
Packaging :
Tape and Reel (TR)
Max Breakdown Voltage :
40V
Number of Pins :
3
Collector Emitter Voltage (VCEO) :
40V
Collector Emitter Saturation Voltage :
250mV
Factory Lead Time :
15 Weeks
Number of Elements :
1
Operating Temperature :
-55°C~150°C TJ
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Terminal Finish :
Nickel/Palladium/Gold (Ni/Pd/Au)
Transistor Element Material :
SILICON
RoHS Status :
ROHS3 Compliant
Transistor Type :
NPN
Package / Case :
3-UFDFN
Radiation Hardening :
No
Frequency :
300MHz
Terminal Position :
BOTTOM
DC Current Gain (hFE) (Min) @ Ic, Vce :
150 @ 100mA 2V
Current - Collector Cutoff (Max) :
100nA ICBO
Pbfree Code :
yes
Base Part Number :
DSS2540M
Max Power Dissipation :
250mW
Time@Peak Reflow Temperature-Max (s) :
40
Number of Terminations :
3
Published :
2015
Collector Base Voltage (VCBO) :
40V
Gain Bandwidth Product :
300MHz
Pin Count :
3
Power Dissipation :
250mW
Collector Emitter Breakdown Voltage :
40V
Mount :
Surface Mount
ECCN Code :
EAR99
Transition Frequency :
300MHz
Polarity/Channel Type :
NPN
Case Connection :
COLLECTOR
Vce Saturation (Max) @ Ib, Ic :
250mV @ 50mA, 500mA
Continuous Collector Current :
500mA
Emitter Base Voltage (VEBO) :
6V
Peak Reflow Temperature (Cel) :
260
JESD-609 Code :
e4
Datasheets
DSS2540M-7B
Introducing Transistors - Bipolar (BJT) - Single Diodes Incorporated DSS2540M-7B from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Number of Pins:3, Operating Temperature:-55°C~150°C TJ, Package / Case:3-UFDFN, Base Part Number:DSS2540M, Number of Terminations:3, DSS2540M-7B pinout, DSS2540M-7B datasheet PDF, DSS2540M-7B amp .Beyond Transistors - Bipolar (BJT) - Single Diodes Incorporated DSS2540M-7B ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Diodes Incorporated DSS2540M-7B


NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN 3-UFDFN Tape & Reel (TR) Surface Mount

DSS2540M-7B Overview


DC current gain in this device equals 150 @ 100mA 2V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 250mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 250mV @ 50mA, 500mA.Single BJT transistor is essential to maintain the continuous collector voltage at 500mA to achieve high efficiency.An emitter's base voltage can be kept at 6V to gain high efficiency.As a result, the part has a transition frequency of 300MHz.Breakdown input voltage is 40V volts.In extreme cases, the collector current can be as low as 500mA volts.

DSS2540M-7B Features


the DC current gain for this device is 150 @ 100mA 2V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 50mA, 500mA
the emitter base voltage is kept at 6V
a transition frequency of 300MHz


DSS2540M-7B Applications


There are a lot of Diodes Incorporated
DSS2540M-7B applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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