DSS20200L-7
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- Mfr.Part #
- DSS20200L-7
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 20V 2A SOT23-3
- Stock
- 309
- In Stock ：
- 309
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Contact Plating :
- Tin
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Factory Lead Time :
- 15 Weeks
- Collector Emitter Saturation Voltage :
- -180mV
- Max Breakdown Voltage :
- 20V
- Transition Frequency :
- 100MHz
- Collector Emitter Breakdown Voltage :
- 20V
- Polarity/Channel Type :
- PNP
- Transistor Application :
- SWITCHING
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 180 @ 1A 2V
- Collector Emitter Voltage (VCEO) :
- 20V
- Pin Count :
- 3
- Radiation Hardening :
- No
- Power - Max :
- 600mW
- Frequency :
- 100MHz
- ECCN Code :
- EAR99
- Collector Base Voltage (VCBO) :
- 20V
- Length :
- 2.9mm
- Width :
- 1.3mm
- RoHS Status :
- ROHS3 Compliant
- hFE Min :
- 250
- Emitter Base Voltage (VEBO) :
- 7V
- Number of Pins :
- 3
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Terminal Form :
- Gull wing
- Max Collector Current :
- 2A
- Termination :
- SMD/SMT
- Number of Elements :
- 1
- Lead Free :
- Lead Free
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- 260
- Base Part Number :
- DSS20200
- Packaging :
- Tape and Reel (TR)
- Mount :
- Surface Mount
- Terminal Position :
- Dual
- Published :
- 2004
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Height :
- 1mm
- JESD-609 Code :
- e3
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Weight :
- 7.994566mg
- Power Dissipation :
- 1.2W
- Vce Saturation (Max) @ Ib, Ic :
- 180mV @ 200mA, 2A
- Pbfree Code :
- yes
- REACH SVHC :
- No SVHC
- Transistor Type :
- PNP
- Number of Terminations :
- 3
- Gain Bandwidth Product :
- 100MHz
- Max Power Dissipation :
- 600mW
- Operating Temperature :
- -55°C~150°C TJ
- Mounting Type :
- Surface Mount
- Datasheets
- DSS20200L-7
DSS20200L-7 Documents
PNP -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
DSS20200L-7 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 180 @ 1A 2V.With a collector emitter saturation voltage of -180mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 180mV @ 200mA, 2A.If the emitter base voltage is kept at 7V, a high level of efficiency can be achieved.A transition frequency of 100MHz is present in the part.There is a breakdown input voltage of 20V volts that it can take.Collector current can be as low as 2A volts at its maximum.
DSS20200L-7 Features
the DC current gain for this device is 180 @ 1A 2V
a collector emitter saturation voltage of -180mV
the vce saturation(Max) is 180mV @ 200mA, 2A
the emitter base voltage is kept at 7V
a transition frequency of 100MHz
DSS20200L-7 Applications
There are a lot of Diodes Incorporated
DSS20200L-7 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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