DSS2515M-7B
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- Mfr.Part #
- DSS2515M-7B
- Manufacturer
- Diodes Incorporated
- Package / Case
- 3-UFDFN
- Datasheet
- Download
- Description
- TRANS NPN 15V 0.5A 3DFN
- Stock
- 76
- In Stock ：
- 76
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 150 @ 100mA 2V
- Radiation Hardening :
- No
- Pin Count :
- 3
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Collector Base Voltage (VCBO) :
- 15V
- JESD-609 Code :
- e4
- Operating Temperature :
- -55°C~150°C TJ
- Number of Elements :
- 1
- Factory Lead Time :
- 15 Weeks
- Gain Bandwidth Product :
- 250MHz
- ECCN Code :
- EAR99
- Collector Emitter Saturation Voltage :
- 250mV
- Max Collector Current :
- 500mA
- Mount :
- Surface Mount
- Mounting Type :
- Surface Mount
- Base Part Number :
- DSS2515M
- Package / Case :
- 3-UFDFN
- Peak Reflow Temperature (Cel) :
- 260
- Element Configuration :
- Single
- Published :
- 2011
- Case Connection :
- COLLECTOR
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Voltage (VCEO) :
- 15V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Emitter Base Voltage (VEBO) :
- 6V
- Number of Pins :
- 3
- Continuous Collector Current :
- 500mA
- Collector Emitter Breakdown Voltage :
- 15V
- Transition Frequency :
- 250MHz
- Max Breakdown Voltage :
- 15V
- Transistor Type :
- NPN
- Terminal Position :
- BOTTOM
- Pbfree Code :
- yes
- Lead Free :
- Lead Free
- Packaging :
- Tape and Reel (TR)
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 50mA, 500mA
- REACH SVHC :
- No SVHC
- Max Power Dissipation :
- 250mW
- Number of Terminations :
- 3
- Polarity/Channel Type :
- NPN
- Transistor Element Material :
- SILICON
- Datasheets
- DSS2515M-7B
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN 3-UFDFN Tape & Reel (TR) Surface Mount
DSS2515M-7B Overview
This device has a DC current gain of 150 @ 100mA 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 250mV.A VCE saturation (Max) of 250mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at 500mA to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.As you can see, the part has a transition frequency of 250MHz.A breakdown input voltage of 15V volts can be used.A maximum collector current of 500mA volts is possible.
DSS2515M-7B Features
the DC current gain for this device is 150 @ 100mA 2V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 50mA, 500mA
the emitter base voltage is kept at 6V
a transition frequency of 250MHz
DSS2515M-7B Applications
There are a lot of Diodes Incorporated
DSS2515M-7B applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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