DSS2515M-7B
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- Mfr.Part #
- DSS2515M-7B
- Manufacturer
- Diodes Incorporated
- Package / Case
- 3-UFDFN
- Datasheet
- Download
- Description
- TRANS NPN 15V 0.5A 3DFN
- Stock
- 76
- In Stock ：
- 76
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mount :
- Surface Mount
- Collector Emitter Saturation Voltage :
- 250mV
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 150 @ 100mA 2V
- Number of Terminations :
- 3
- Lead Free :
- Lead Free
- Peak Reflow Temperature (Cel) :
- 260
- Gain Bandwidth Product :
- 250MHz
- Published :
- 2011
- Collector Emitter Breakdown Voltage :
- 15V
- Pin Count :
- 3
- Collector Emitter Voltage (VCEO) :
- 15V
- Max Power Dissipation :
- 250mW
- Pbfree Code :
- yes
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 50mA, 500mA
- Radiation Hardening :
- No
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- Number of Pins :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- REACH SVHC :
- No SVHC
- JESD-609 Code :
- e4
- Terminal Position :
- BOTTOM
- Transition Frequency :
- 250MHz
- Collector Base Voltage (VCBO) :
- 15V
- Base Part Number :
- DSS2515M
- Mounting Type :
- Surface Mount
- Polarity/Channel Type :
- NPN
- Case Connection :
- COLLECTOR
- Factory Lead Time :
- 15 Weeks
- Continuous Collector Current :
- 500mA
- Packaging :
- Tape and Reel (TR)
- Max Collector Current :
- 500mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- 3-UFDFN
- Transistor Type :
- NPN
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Emitter Base Voltage (VEBO) :
- 6V
- ECCN Code :
- EAR99
- Max Breakdown Voltage :
- 15V
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Datasheets
- DSS2515M-7B
DSS2515M-7B Documents
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN 3-UFDFN Tape & Reel (TR) Surface Mount
DSS2515M-7B Overview
This device has a DC current gain of 150 @ 100mA 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 250mV.A VCE saturation (Max) of 250mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at 500mA to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.As you can see, the part has a transition frequency of 250MHz.A breakdown input voltage of 15V volts can be used.A maximum collector current of 500mA volts is possible.
DSS2515M-7B Features
the DC current gain for this device is 150 @ 100mA 2V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 50mA, 500mA
the emitter base voltage is kept at 6V
a transition frequency of 250MHz
DSS2515M-7B Applications
There are a lot of Diodes Incorporated
DSS2515M-7B applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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