DSS2515M-7B
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- Mfr.Part #
- DSS2515M-7B
- Manufacturer
- Diodes Incorporated
- Package / Case
- 3-UFDFN
- Datasheet
- Download
- Description
- TRANS NPN 15V 0.5A 3DFN
- Stock
- 76
- In Stock ：
- 76
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Saturation Voltage :
- 250mV
- Lead Free :
- Lead Free
- Number of Terminations :
- 3
- Factory Lead Time :
- 15 Weeks
- Polarity/Channel Type :
- NPN
- Package / Case :
- 3-UFDFN
- Number of Elements :
- 1
- Collector Emitter Breakdown Voltage :
- 15V
- Collector Emitter Voltage (VCEO) :
- 15V
- Case Connection :
- COLLECTOR
- REACH SVHC :
- No SVHC
- Transition Frequency :
- 250MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 50mA, 500mA
- Base Part Number :
- DSS2515M
- Emitter Base Voltage (VEBO) :
- 6V
- Pbfree Code :
- yes
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 150 @ 100mA 2V
- Collector Base Voltage (VCBO) :
- 15V
- Element Configuration :
- Single
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Terminal Position :
- BOTTOM
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C~150°C TJ
- Max Power Dissipation :
- 250mW
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Number of Pins :
- 3
- JESD-609 Code :
- e4
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- Pin Count :
- 3
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2011
- Max Collector Current :
- 500mA
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Type :
- NPN
- Max Breakdown Voltage :
- 15V
- Packaging :
- Tape and Reel (TR)
- Continuous Collector Current :
- 500mA
- Gain Bandwidth Product :
- 250MHz
- Radiation Hardening :
- No
- Mount :
- Surface Mount
- Datasheets
- DSS2515M-7B
DSS2515M-7B Documents
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN 3-UFDFN Tape & Reel (TR) Surface Mount
DSS2515M-7B Overview
This device has a DC current gain of 150 @ 100mA 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 250mV.A VCE saturation (Max) of 250mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at 500mA to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.As you can see, the part has a transition frequency of 250MHz.A breakdown input voltage of 15V volts can be used.A maximum collector current of 500mA volts is possible.
DSS2515M-7B Features
the DC current gain for this device is 150 @ 100mA 2V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 50mA, 500mA
the emitter base voltage is kept at 6V
a transition frequency of 250MHz
DSS2515M-7B Applications
There are a lot of Diodes Incorporated
DSS2515M-7B applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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