DSA2G01B0L
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- Mfr.Part #
- DSA2G01B0L
- Manufacturer
- Panasonic
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 20V 0.03A MINI3
- Stock
- 47,800
- In Stock ：
- 47,800
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- Manufacturer :
- Panasonic
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Finish :
- Tin/Bismuth (Sn/Bi)
- Collector Emitter Saturation Voltage :
- -100mV
- Mounting Type :
- Surface Mount
- Terminal Form :
- Gull wing
- JESD-609 Code :
- e6
- Max Collector Current :
- 30mA
- HTS Code :
- 8541.21.00.75
- Current - Collector Cutoff (Max) :
- 100μA
- Max Breakdown Voltage :
- 20V
- Height :
- 1.1mm
- Max Frequency :
- 300MHz
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Frequency - Transition :
- 300MHz
- Width :
- 1.5mm
- Factory Lead Time :
- 10 Weeks
- ECCN Code :
- EAR99
- Operating Temperature :
- 150°C TJ
- Collector Emitter Breakdown Voltage :
- 20V
- Published :
- 2010
- Number of Pins :
- 3
- Collector Base Voltage (VCBO) :
- -30V
- Transistor Application :
- AMPLIFIER
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 70 @ 1mA 10V
- Transition Frequency :
- 300MHz
- RoHS Status :
- RoHS Compliant
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Terminal Position :
- Dual
- Transistor Type :
- PNP
- Reach Compliance Code :
- Unknown
- Number of Elements :
- 1
- Number of Terminations :
- 3
- Mount :
- Surface Mount
- Polarity/Channel Type :
- PNP
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Voltage (VCEO) :
- 100mV
- Transistor Element Material :
- SILICON
- Vce Saturation (Max) @ Ib, Ic :
- 100mV @ 1mA, 10mA
- Emitter Base Voltage (VEBO) :
- -5V
- Length :
- 2.9mm
- Pbfree Code :
- yes
- Element Configuration :
- Single
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Max Power Dissipation :
- 200mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- DSA2G01B0L
PNP 150°C TJ 100μA 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
DSA2G01B0L Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 70 @ 1mA 10V.With a collector emitter saturation voltage of -100mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 100mV @ 1mA, 10mA.If the emitter base voltage is kept at -5V, a high level of efficiency can be achieved.A transition frequency of 300MHz is present in the part.There is a breakdown input voltage of 20V volts that it can take.Collector current can be as low as 30mA volts at its maximum.
DSA2G01B0L Features
the DC current gain for this device is 70 @ 1mA 10V
a collector emitter saturation voltage of -100mV
the vce saturation(Max) is 100mV @ 1mA, 10mA
the emitter base voltage is kept at -5V
a transition frequency of 300MHz
DSA2G01B0L Applications
There are a lot of Panasonic Electronic Components
DSA2G01B0L applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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