DSA200100L
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- Mfr.Part #
- DSA200100L
- Manufacturer
- Panasonic
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 50V 0.1A MINI3
- Stock
- 136,264
- In Stock ：
- 136,264
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- Manufacturer :
- Panasonic
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Frequency :
- 150MHz
- Terminal Position :
- Dual
- Max Power Dissipation :
- 200mW
- Mount :
- Surface Mount
- Height :
- 1.1mm
- Collector Base Voltage (VCBO) :
- -60V
- Transistor Type :
- PNP
- hFE Min :
- 210
- Collector Emitter Voltage (VCEO) :
- 500mV
- Number of Elements :
- 1
- Collector Emitter Breakdown Voltage :
- 50V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Factory Lead Time :
- 10 Weeks
- Current - Collector Cutoff (Max) :
- 100μA
- HTS Code :
- 8541.21.00.75
- Length :
- 2.9mm
- RoHS Status :
- RoHS Compliant
- Operating Temperature :
- 150°C TJ
- Transistor Application :
- AMPLIFIER
- Emitter Base Voltage (VEBO) :
- -7V
- Number of Terminations :
- 3
- Max Collector Current :
- 100mA
- Transition Frequency :
- 150MHz
- Element Configuration :
- Single
- Base Part Number :
- DSA2001
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 210 @ 2mA 10V
- Gain Bandwidth Product :
- 150MHz
- Polarity/Channel Type :
- NPN
- Number of Pins :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Terminal Form :
- Flat
- Collector Emitter Saturation Voltage :
- -500mV
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 10mA, 100mA
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Transistor Element Material :
- SILICON
- Width :
- 1.5mm
- Max Breakdown Voltage :
- 50V
- ECCN Code :
- EAR99
- Packaging :
- Cut Tape (CT)
- Continuous Collector Current :
- -100mA
- Published :
- 2009
- Mounting Type :
- Surface Mount
- Datasheets
- DSA200100L
PNP 150°C TJ 100μA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Surface Mount
DSA200100L Overview
DC current gain in this device equals 210 @ 2mA 10V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is -500mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 10mA, 100mA.Single BJT transistor is essential to maintain the continuous collector voltage at -100mA to achieve high efficiency.An emitter's base voltage can be kept at -7V to gain high efficiency.As a result, the part has a transition frequency of 150MHz.Breakdown input voltage is 50V volts.In extreme cases, the collector current can be as low as 100mA volts.
DSA200100L Features
the DC current gain for this device is 210 @ 2mA 10V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 10mA, 100mA
the emitter base voltage is kept at -7V
a transition frequency of 150MHz
DSA200100L Applications
There are a lot of Panasonic Electronic Components
DSA200100L applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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