DSA200200L
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- Mfr.Part #
- DSA200200L
- Manufacturer
- Panasonic
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 50V 0.5A MINI3
- Stock
- 55,806
- In Stock ：
- 55,806
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- Manufacturer :
- Panasonic
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Polarity/Channel Type :
- NPN
- Transition Frequency :
- 160MHz
- Collector Emitter Saturation Voltage :
- -600mV
- Number of Terminations :
- 3
- Number of Elements :
- 1
- Max Collector Current :
- 500mA
- Max Power Dissipation :
- 200mW
- Packaging :
- Tape and Reel (TR)
- Max Breakdown Voltage :
- 50V
- Factory Lead Time :
- 10 Weeks
- Mounting Type :
- Surface Mount
- Number of Pins :
- 3
- Mount :
- Surface Mount
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 30mA, 300mA
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Published :
- 2011
- Terminal Finish :
- Tin/Bismuth (Sn/Bi)
- Max Frequency :
- 130MHz
- JESD-609 Code :
- e6
- Transistor Type :
- PNP
- Emitter Base Voltage (VEBO) :
- -5V
- Terminal Form :
- Gull wing
- ECCN Code :
- EAR99
- Operating Temperature :
- 150°C TJ
- Width :
- 1.5mm
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- hFE Min :
- 120
- Collector Base Voltage (VCBO) :
- -60V
- Length :
- 2.9mm
- Collector Emitter Voltage (VCEO) :
- 600mV
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 150mA 10V
- Terminal Position :
- Dual
- Height :
- 1.1mm
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Gain Bandwidth Product :
- 130MHz
- Transistor Application :
- AMPLIFIER
- HTS Code :
- 8541.21.00.75
- Element Configuration :
- Single
- Base Part Number :
- DSA2002
- Reach Compliance Code :
- Unknown
- RoHS Status :
- RoHS Compliant
- Collector Emitter Breakdown Voltage :
- 50V
- Datasheets
- DSA200200L
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
DSA200200L Overview
In this device, the DC current gain is 120 @ 150mA 10V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -600mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 600mV @ 30mA, 300mA.With the emitter base voltage set at -5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 160MHz.Input voltage breakdown is available at 50V volts.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
DSA200200L Features
the DC current gain for this device is 120 @ 150mA 10V
a collector emitter saturation voltage of -600mV
the vce saturation(Max) is 600mV @ 30mA, 300mA
the emitter base voltage is kept at -5V
a transition frequency of 160MHz
DSA200200L Applications
There are a lot of Panasonic Electronic Components
DSA200200L applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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