DSA200200L
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- Mfr.Part #
- DSA200200L
- Manufacturer
- Panasonic
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 50V 0.5A MINI3
- Stock
- 55,806
- In Stock ：
- 55,806
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- Manufacturer :
- Panasonic
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mount :
- Surface Mount
- Length :
- 2.9mm
- Collector Base Voltage (VCBO) :
- -60V
- Max Frequency :
- 130MHz
- RoHS Status :
- RoHS Compliant
- Max Collector Current :
- 500mA
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Collector Emitter Breakdown Voltage :
- 50V
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- Number of Elements :
- 1
- Terminal Form :
- Gull wing
- JESD-609 Code :
- e6
- Transistor Type :
- PNP
- Number of Pins :
- 3
- Gain Bandwidth Product :
- 130MHz
- Collector Emitter Saturation Voltage :
- -600mV
- Terminal Finish :
- Tin/Bismuth (Sn/Bi)
- ECCN Code :
- EAR99
- hFE Min :
- 120
- Factory Lead Time :
- 10 Weeks
- Reach Compliance Code :
- Unknown
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Width :
- 1.5mm
- Emitter Base Voltage (VEBO) :
- -5V
- Max Power Dissipation :
- 200mW
- Published :
- 2011
- Number of Terminations :
- 3
- Transistor Application :
- AMPLIFIER
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 150mA 10V
- Mounting Type :
- Surface Mount
- Height :
- 1.1mm
- HTS Code :
- 8541.21.00.75
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Packaging :
- Tape and Reel (TR)
- Operating Temperature :
- 150°C TJ
- Polarity/Channel Type :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Position :
- Dual
- Transition Frequency :
- 160MHz
- Collector Emitter Voltage (VCEO) :
- 600mV
- Base Part Number :
- DSA2002
- Max Breakdown Voltage :
- 50V
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 30mA, 300mA
- Datasheets
- DSA200200L
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
DSA200200L Overview
In this device, the DC current gain is 120 @ 150mA 10V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -600mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 600mV @ 30mA, 300mA.With the emitter base voltage set at -5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 160MHz.Input voltage breakdown is available at 50V volts.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
DSA200200L Features
the DC current gain for this device is 120 @ 150mA 10V
a collector emitter saturation voltage of -600mV
the vce saturation(Max) is 600mV @ 30mA, 300mA
the emitter base voltage is kept at -5V
a transition frequency of 160MHz
DSA200200L Applications
There are a lot of Panasonic Electronic Components
DSA200200L applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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