DPLS350E-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Frequency :

100MHz

Number of Terminations :

4

Terminal Finish :

Matte Tin (Sn)

Pbfree Code :

yes

REACH SVHC :

No SVHC

Polarity/Channel Type :

PNP

Operating Temperature :

-55°C~150°C TJ

Collector Emitter Saturation Voltage :

-300mV

Width :

3.7mm

JESD-609 Code :

e3

Transition Frequency :

100MHz

Max Collector Current :

3A

Collector Emitter Breakdown Voltage :

50V

Current - Collector Cutoff (Max) :

100nA ICBO

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Collector Base Voltage (VCBO) :

60V

Vce Saturation (Max) @ Ib, Ic :

300mV @ 200mA, 2A

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 2A 2V

Element Configuration :

Single

Collector Emitter Voltage (VCEO) :

50V

Max Power Dissipation :

1W

Case Connection :

COLLECTOR

Terminal Form :

Gull wing

ECCN Code :

EAR99

Height :

1.65mm

Package / Case :

TO-261-4, TO-261AA

RoHS Status :

ROHS3 Compliant

Weight :

7.994566mg

Base Part Number :

DPLS350

Mount :

Surface Mount

Emitter Base Voltage (VEBO) :

-6V

Mounting Type :

Surface Mount

Length :

6.7mm

Number of Pins :

4

Gain Bandwidth Product :

100MHz

Terminal Position :

Dual

Transistor Type :

PNP

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

40

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

260

Pin Count :

4

Max Breakdown Voltage :

50V

Factory Lead Time :

15 Weeks

Published :

2009

Radiation Hardening :

No

Power Dissipation :

1W