DPLS160V-7
- Mfr.Part #
- DPLS160V-7
- Manufacturer
- Diodes Incorporated
- Package / Case
- SOT-563, SOT-666
- Datasheet
- Download
- Description
- TRANS PNP 60V 1A SOT563
- Stock
- 2,006
- In Stock :
- 2,006
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Surface Mount
- Polarity/Channel Type :
- PNP
- Factory Lead Time :
- 19 Weeks
- Base Part Number :
- DPLS160
- Max Power Dissipation :
- 300mW
- Terminal Position :
- Dual
- Number of Elements :
- 1
- Frequency :
- 220MHz
- Length :
- 1.6mm
- Pin Count :
- 6
- Mount :
- Surface Mount
- Package / Case :
- SOT-563, SOT-666
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation :
- 300mW
- Max Breakdown Voltage :
- 60V
- Radiation Hardening :
- No
- Terminal Finish :
- Matte Tin (Sn)
- Collector Emitter Voltage (VCEO) :
- 60V
- Current - Collector Cutoff (Max) :
- 100nA
- Number of Terminations :
- 6
- Element Configuration :
- Single
- Emitter Base Voltage (VEBO) :
- 5V
- Published :
- 2008
- Width :
- 1.2mm
- Transition Frequency :
- 220MHz
- Gain Bandwidth Product :
- 220MHz
- Transistor Element Material :
- SILICON
- Transistor Type :
- PNP
- ECCN Code :
- EAR99
- Weight :
- 3.005049mg
- Terminal Form :
- Flat
- REACH SVHC :
- No SVHC
- Pbfree Code :
- yes
- Packaging :
- Tape and Reel (TR)
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Max Collector Current :
- 1A
- Vce Saturation (Max) @ Ib, Ic :
- 330mV @ 100mA, 1A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 6
- hFE Min :
- 250
- Height :
- 600μm
- JESD-609 Code :
- e3
- Additional Feature :
- High Reliability
- Peak Reflow Temperature (Cel) :
- 260
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 150 @ 500mA 5V
- Collector Emitter Breakdown Voltage :
- 60V
- Collector Base Voltage (VCBO) :
- 80V
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- DPLS160V-7

PNP -55°C~150°C TJ 100nA 1 Elements 6 Terminations SILICON PNP SOT-563, SOT-666 Tape & Reel (TR) Surface Mount
DPLS160V-7 Overview
In this device, the DC current gain is 150 @ 500mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 330mV @ 100mA, 1A.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 220MHz.Input voltage breakdown is available at 60V volts.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
DPLS160V-7 Features
the DC current gain for this device is 150 @ 500mA 5V
the vce saturation(Max) is 330mV @ 100mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 220MHz
DPLS160V-7 Applications
There are a lot of Diodes Incorporated
DPLS160V-7 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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