DPLS350Y-13

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Mfr.Part #
DPLS350Y-13
Manufacturer
Diodes Incorporated
Package / Case
TO-243AA
Datasheet
Download
Description
TRANS PNP 50V 3A SOT89-3
Stock
214,655
In Stock :
214,655

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Manufacturer :
Diodes Incorporated
Product Category :
Transistors - Bipolar (BJT) - Single
Number of Elements :
1
Power Dissipation :
1W
REACH SVHC :
No SVHC
Mounting Type :
Surface Mount
Number of Pins :
4
DC Current Gain (hFE) (Min) @ Ic, Vce :
200 @ 1A 2V
Element Configuration :
Single
Time@Peak Reflow Temperature-Max (s) :
30
Height :
1.5mm
Frequency :
100MHz
Additional Feature :
High Reliability
Terminal Finish :
Matte Tin (Sn)
Lead Free :
Lead Free
Polarity/Channel Type :
PNP
Max Collector Current :
3A
Published :
2014
Max Power Dissipation :
1W
JESD-30 Code :
R-PSSO-F3
Length :
4.5mm
Transistor Element Material :
SILICON
Packaging :
Tape and Reel (TR)
Width :
2.48mm
Current - Collector Cutoff (Max) :
100nA
Mount :
Surface Mount
Transistor Type :
PNP
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Factory Lead Time :
19 Weeks
Package / Case :
TO-243AA
Operating Temperature :
-55°C~150°C TJ
Collector Emitter Voltage (VCEO) :
50V
Radiation Hardening :
No
RoHS Status :
ROHS3 Compliant
JESD-609 Code :
e3
Max Breakdown Voltage :
50V
Transition Frequency :
100MHz
Case Connection :
COLLECTOR
Collector Emitter Breakdown Voltage :
50V
Vce Saturation (Max) @ Ib, Ic :
390mV @ 300mA, 3A
Weight :
51.993025mg
Peak Reflow Temperature (Cel) :
260
Terminal Form :
Flat
Number of Terminations :
3
Emitter Base Voltage (VEBO) :
-6V
Base Part Number :
DPLS350
Collector Base Voltage (VCBO) :
50V
Gain Bandwidth Product :
100MHz
Collector Emitter Saturation Voltage :
-390mV
Datasheets
DPLS350Y-13
Introducing Transistors - Bipolar (BJT) - Single Diodes Incorporated DPLS350Y-13 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Number of Pins:4, Package / Case:TO-243AA, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Base Part Number:DPLS350, DPLS350Y-13 pinout, DPLS350Y-13 datasheet PDF, DPLS350Y-13 amp .Beyond Transistors - Bipolar (BJT) - Single Diodes Incorporated DPLS350Y-13 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Diodes Incorporated DPLS350Y-13


PNP -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount

DPLS350Y-13 Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 200 @ 1A 2V.With a collector emitter saturation voltage of -390mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 390mV @ 300mA, 3A.If the emitter base voltage is kept at -6V, a high level of efficiency can be achieved.A transition frequency of 100MHz is present in the part.There is a breakdown input voltage of 50V volts that it can take.Collector current can be as low as 3A volts at its maximum.

DPLS350Y-13 Features


the DC current gain for this device is 200 @ 1A 2V
a collector emitter saturation voltage of -390mV
the vce saturation(Max) is 390mV @ 300mA, 3A
the emitter base voltage is kept at -6V
a transition frequency of 100MHz


DPLS350Y-13 Applications


There are a lot of Diodes Incorporated
DPLS350Y-13 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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