DN0150BLP4-7B
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- Mfr.Part #
- DN0150BLP4-7B
- Manufacturer
- Diodes Incorporated
- Package / Case
- 3-XFDFN
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.1A 3DFN
- Stock
- 4,706
- In Stock ：
- 4,706
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Breakdown Voltage :
- 50V
- Gain Bandwidth Product :
- 60MHz
- Collector Emitter Saturation Voltage :
- 250mV
- Operating Temperature :
- -55°C~150°C TJ
- Emitter Base Voltage (VEBO) :
- 5V
- Max Collector Current :
- 100mA
- Max Power Dissipation :
- 450mW
- JESD-609 Code :
- e4
- Continuous Collector Current :
- 100mA
- Number of Pins :
- 3
- Transistor Element Material :
- SILICON
- Pbfree Code :
- yes
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Type :
- NPN
- Published :
- 2015
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Breakdown Voltage :
- 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 6V
- ECCN Code :
- EAR99
- REACH SVHC :
- No SVHC
- Mounting Type :
- Surface Mount
- Package / Case :
- 3-XFDFN
- Case Connection :
- COLLECTOR
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Mount :
- Surface Mount
- Number of Terminations :
- 3
- Collector Emitter Voltage (VCEO) :
- 50V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Base Voltage (VCBO) :
- 60V
- Element Configuration :
- Single
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Number of Elements :
- 1
- Additional Feature :
- High Reliability
- Factory Lead Time :
- 15 Weeks
- Terminal Position :
- BOTTOM
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transition Frequency :
- 60MHz
- Base Part Number :
- DN0150
- Polarity/Channel Type :
- NPN
- Radiation Hardening :
- No
- Pin Count :
- 3
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- DN0150BLP4-7B
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN 3-XFDFN Tape & Reel (TR) Surface Mount
DN0150BLP4-7B Overview
In this device, the DC current gain is 200 @ 2mA 6V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 250mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 250mV @ 10mA, 100mA.A 100mA continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 60MHz.Input voltage breakdown is available at 50V volts.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.
DN0150BLP4-7B Features
the DC current gain for this device is 200 @ 2mA 6V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 60MHz
DN0150BLP4-7B Applications
There are a lot of Diodes Incorporated
DN0150BLP4-7B applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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