DN0150ALP4-7
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- Mfr.Part #
- DN0150ALP4-7
- Manufacturer
- Diodes Incorporated
- Package / Case
- 3-XFDFN
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.1A 3DFN
- Stock
- 41,092
- In Stock ：
- 41,092
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Base Part Number :
- DN0150
- Number of Elements :
- 1
- Published :
- 2015
- Factory Lead Time :
- 15 Weeks
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Breakdown Voltage :
- 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 2mA 6V
- Polarity/Channel Type :
- NPN
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Collector Emitter Voltage (VCEO) :
- 50V
- Max Power Dissipation :
- 450mW
- Collector Emitter Saturation Voltage :
- 250mV
- Max Breakdown Voltage :
- 50V
- Pin Count :
- 3
- Mounting Type :
- Surface Mount
- Package / Case :
- 3-XFDFN
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tape and Reel (TR)
- Element Configuration :
- Single
- Number of Pins :
- 3
- Number of Terminations :
- 3
- Case Connection :
- COLLECTOR
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Operating Temperature :
- -55°C~150°C TJ
- ECCN Code :
- EAR99
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Terminal Position :
- BOTTOM
- Gain Bandwidth Product :
- 60MHz
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Mount :
- Surface Mount
- Peak Reflow Temperature (Cel) :
- 260
- Collector Base Voltage (VCBO) :
- 60V
- REACH SVHC :
- No SVHC
- Transistor Type :
- NPN
- Continuous Collector Current :
- 100mA
- Transition Frequency :
- 60MHz
- Radiation Hardening :
- No
- Emitter Base Voltage (VEBO) :
- 5V
- Additional Feature :
- High Reliability
- JESD-609 Code :
- e4
- Pbfree Code :
- yes
- Max Collector Current :
- 100mA
- Datasheets
- DN0150ALP4-7
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN 3-XFDFN Tape & Reel (TR) Surface Mount
DN0150ALP4-7B Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 120 @ 2mA 6V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 250mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 250mV @ 10mA, 100mA.Single BJT transistor is recommended to keep the continuous collector voltage at 100mA in order to achieve high efficiency.The emitter base voltage can be kept at 5V for high efficiency.The part has a transition frequency of 60MHz.The breakdown input voltage is 50V volts.Single BJT transistor is possible to have a collector current as low as 100mA volts at Single BJT transistors maximum.
DN0150ALP4-7B Features
the DC current gain for this device is 120 @ 2mA 6V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 60MHz
DN0150ALP4-7B Applications
There are a lot of Diodes Incorporated
DN0150ALP4-7B applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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