DN0150ADJ-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

Factory Lead Time :

15 Weeks

Mounting Type :

Surface Mount

Radiation Hardening :

No

Packaging :

Tape and Reel (TR)

Height :

450μm

Collector Emitter Breakdown Voltage :

50V

RoHS Status :

ROHS3 Compliant

Element Configuration :

Dual

Transistor Type :

2 NPN (Dual)

Gain Bandwidth Product :

60MHz

Peak Reflow Temperature (Cel) :

260

Base Part Number :

DN0150AD

Mount :

Surface Mount

Number of Pins :

6

Transition Frequency :

60MHz

Max Breakdown Voltage :

50V

Time@Peak Reflow Temperature-Max (s) :

40

Published :

2009

Collector Base Voltage (VCBO) :

60V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Emitter Base Voltage (VEBO) :

5V

Terminal Finish :

Matte Tin (Sn)

Length :

1mm

Transistor Element Material :

SILICON

Width :

800μm

JESD-609 Code :

e3

Vce Saturation (Max) @ Ib, Ic :

250mV @ 10mA, 100mA

Terminal Form :

Flat

Collector Emitter Voltage (VCEO) :

50V

REACH SVHC :

No SVHC

Number of Elements :

2

Pin Count :

6

Package / Case :

SOT-963

Operating Temperature :

-55°C~150°C TJ

Max Collector Current :

100mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 2mA 6V

Power - Max :

300mW

Current - Collector Cutoff (Max) :

100nA ICBO

ECCN Code :

EAR99

Number of Terminations :

6

Polarity :

NPN

Max Power Dissipation :

300mW

Pbfree Code :

yes