DMT68M8LSS-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

260

Operating Temperature :

-55°C~150°C TJ

Avalanche Energy Rating (Eas) :

54.2 mJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Element Material :

SILICON

Vgs (Max) :

±20V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Drain Current-Max (Abs) (ID) :

12.1A

Terminal Form :

Gull wing

Current - Continuous Drain (Id) @ 25°C :

28.9A Tc

Transistor Application :

SWITCHING

Drain to Source Voltage (Vdss) :

60V

Number of Terminations :

8

Power Dissipation-Max :

1.9W Ta

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

31.8nC @ 10V

Surface Mount :

yes

RoHS Status :

ROHS3 Compliant

DS Breakdown Voltage-Min :

60V

Rds On (Max) @ Id, Vgs :

8.5m Ω @ 13.5A, 10V

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

30

Terminal Finish :

Matte Tin (Sn)

Factory Lead Time :

20 Weeks

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Input Capacitance (Ciss) (Max) @ Vds :

2107pF @ 30V

Mounting Type :

Surface Mount

Drain-source On Resistance-Max :

0.0085Ohm

Packaging :

Tape and Reel (TR)

Terminal Position :

Dual

Number of Elements :

1

ECCN Code :

EAR99

JESD-30 Code :

R-PDSO-G8

Pulsed Drain Current-Max (IDM) :

100A

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

3V @ 250µA