DMT6004LPS-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Pulsed Drain Current-Max (IDM) :

100A

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Package / Case :

8-PowerTDFN

Gate Charge (Qg) (Max) @ Vgs :

96.3nC @ 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Elements :

1

JESD-609 Code :

e3

Number of Pins :

8

Vgs(th) (Max) @ Id :

3V @ 250µA

Transistor Element Material :

SILICON

Number of Terminations :

5

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Terminal Form :

Flat

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

2.8m Ω @ 25A, 10V

Published :

2014

FET Type :

N-Channel

Drain to Source Voltage (Vdss) :

60V

Factory Lead Time :

22 Weeks

Avalanche Energy Rating (Eas) :

160 mJ

ECCN Code :

EAR99

Terminal Finish :

Matte Tin (Sn)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Additional Feature :

High Reliability

Reference Standard :

AEC-Q101

JESD-30 Code :

R-PDSO-F5

Drain Current-Max (Abs) (ID) :

22A

Current - Continuous Drain (Id) @ 25°C :

22A Ta 90A Tc

Power Dissipation-Max :

2.1W Ta 105W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

Mount :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

4515pF @ 30V

Reach Compliance Code :

not_compliant

Continuous Drain Current (ID) :

90A

DS Breakdown Voltage-Min :

60V

Terminal Position :

Dual