DMT6006LSS-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Symmetry Max :

55(%)

Power Dissipation :

2.08

Vgs (Max) :

±20V

Technology :

Si

FET Feature :

-

Frequency Stability :

±20(ppm)

Rise Time :

5.4 ns

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Rds On (Max) @ Id, Vgs :

6.5mOhm @ 20A, 10V

Brand :

Diodes Incorporated

Programmable :

No

Transistor Type :

1 N-Channel

Gate Charge (Qg) (Max) @ Vgs :

34.9 nC @ 10 V

Drain to Source Voltage (Vdss) :

60 V

Operating Supply Voltage (Max) :

1.98(V)

Number of Channels :

1 Channel

Load Capacitance :

15(pF)

Subcategory :

MOSFETs

Channel Type :

N Channel

FET Type :

N-Channel

Operating Temperature :

-55°C ~ 150°C (TJ)

Mounting Style :

SMD/SMT

Packaging :

Bulk

Qualification :

-

Input Capacitance (Ciss) (Max) @ Vds :

2162 pF @ 30 V

Power Dissipation (Max) :

1.38W (Ta)

Package :

Tape and Reel (TR)

Package / Case :

QFN

MSL :

MSL 1 - Unlimited

Type :

Clock Oscillator

Current - Continuous Drain (Id) @ 25°C :

11.9A (Ta)

Configuration :

Single

Operating Supply Voltage (Min) :

1.62(V)

Supplier Device Package :

8-SO

Standard Frequency :

75

Operating Temp Range :

-40C to 85C

Manufacturer :

Diodes Incorporated

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

Mounting Type :

Surface Mount

Product Type :

MOSFET

Transistor Polarity :

N-Channel

Series :

-

Maximum Operating Temperature :

+ 150 C

Continuous Drain Current Id :

14.6

Product Category :

MOSFET

Channel Mode :

Enhancement

Product Status :

Active

Minimum Operating Temperature :

- 55 C