DMT6016LSS-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Drain Current-Max (Abs) (ID) :

7.5A

Terminal Finish :

Matte Tin (Sn)

Turn-Off Delay Time :

13 ns

Number of Channels :

1

Terminal Position :

Dual

Gate to Source Voltage (Vgs) :

20V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Published :

2014

Factory Lead Time :

23 Weeks

FET Type :

N-Channel

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 10V

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Continuous Drain Current (ID) :

9.2A

Number of Pins :

8

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

9.2A Ta

Element Configuration :

Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mount :

Surface Mount

Fall Time (Typ) :

7 ns

Rise Time :

5.2ns

Power Dissipation-Max :

1.5W Ta

Lead Free :

Lead Free

Pulsed Drain Current-Max (IDM) :

60A

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Terminal Form :

Gull wing

ECCN Code :

EAR99

Number of Terminations :

8

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

18m Ω @ 10A, 10V

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

864pF @ 30V

Drain to Source Breakdown Voltage :

60V

Vgs (Max) :

±20V

Weight :

73.992255mg

Turn On Delay Time :

3.4 ns