DMT6016LPS-13
- Mfr.Part #
- DMT6016LPS-13
- Manufacturer
- Diodes Incorporated
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 10.6A PWRDI5060
- Stock
- 760
- In Stock :
- 760
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Pins :
- 8
- Packaging :
- Tape and Reel (TR)
- Drain Current-Max (Abs) (ID) :
- 32A
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Mounting Type :
- Surface Mount
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Current - Continuous Drain (Id) @ 25°C :
- 10.6A Ta
- Lead Free :
- Lead Free
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Number of Terminations :
- 5
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Weight :
- 95.991485mg
- Continuous Drain Current (ID) :
- 10.6A
- Resistance :
- 16mOhm
- Terminal Position :
- Dual
- Mount :
- Surface Mount
- Operating Mode :
- ENHANCEMENT MODE
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2015
- Package / Case :
- 8-PowerTDFN
- Terminal Form :
- Flat
- Operating Temperature :
- -55°C~150°C TJ
- JESD-30 Code :
- R-PDSO-F5
- JESD-609 Code :
- e3
- Turn-Off Delay Time :
- 13 ns
- Number of Channels :
- 1
- Pulsed Drain Current-Max (IDM) :
- 60A
- Rds On (Max) @ Id, Vgs :
- 16m Ω @ 10A, 10V
- Rise Time :
- 5.2ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 864pF @ 30V
- Peak Reflow Temperature (Cel) :
- 260
- Gate Charge (Qg) (Max) @ Vgs :
- 17nC @ 10V
- Case Connection :
- DRAIN
- Drain to Source Voltage (Vdss) :
- 60V
- Element Configuration :
- Single
- Power Dissipation-Max :
- 1.23W Ta
- Turn On Delay Time :
- 3.4 ns
- Transistor Application :
- SWITCHING
- DS Breakdown Voltage-Min :
- 60V
- FET Type :
- N-Channel
- Terminal Finish :
- Matte Tin (Sn)
- Fall Time (Typ) :
- 7 ns
- Factory Lead Time :
- 22 Weeks
- Gate to Source Voltage (Vgs) :
- 20V
- Vgs (Max) :
- ±20V
- Datasheets
- DMT6016LPS-13

N-Channel Tape & Reel (TR) 16m Ω @ 10A, 10V ±20V 864pF @ 30V 17nC @ 10V 60V 8-PowerTDFN
DMT6016LPS-13 Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 864pF @ 30V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 10.6A.32A is the drain current of this device, which is the maximum continuous current transistor can carry.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 13 ns.Peak drain current for this device is 60A, which is its maximum pulsed drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 3.4 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 60V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 60V.Using drive voltage (4.5V 10V) reduces this device's overall power consumption.
DMT6016LPS-13 Features
a continuous drain current (ID) of 10.6A
the turn-off delay time is 13 ns
based on its rated peak drain current 60A.
a 60V drain to source voltage (Vdss)
DMT6016LPS-13 Applications
There are a lot of Diodes Incorporated
DMT6016LPS-13 applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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