DMT6016LFDF-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

60V

Factory Lead Time :

22 Weeks

Case Connection :

DRAIN

Fall Time (Typ) :

6.8 ns

Continuous Drain Current (ID) :

8.9A

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Position :

Dual

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 10V

JESD-609 Code :

e4

Published :

2014

Number of Channels :

1

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Vgs(th) (Max) @ Id :

3V @ 250µA

Power Dissipation-Max :

820mW Ta

Rds On (Max) @ Id, Vgs :

16m Ω @ 10A, 10V

Resistance :

16mOhm

Current - Continuous Drain (Id) @ 25°C :

8.9A Ta

Number of Terminations :

6

Element Configuration :

Single

JESD-30 Code :

S-PDSO-N6

Input Capacitance (Ciss) (Max) @ Vds :

864pF @ 30V

DS Breakdown Voltage-Min :

60V

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Turn On Delay Time :

3.4 ns

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Surface Mount

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Gate to Source Voltage (Vgs) :

20V

Turn-Off Delay Time :

12.9 ns

Rise Time :

5.2ns

Package / Case :

6-UDFN Exposed Pad

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

Mount :

Surface Mount

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Form :

NO LEAD

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V