DMT6010LPS-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

5

Terminal Form :

Flat

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Matte Tin (Sn)

Package / Case :

8-PowerTDFN

Avalanche Energy Rating (Eas) :

20 mJ

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

41.3nC @ 10V

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

8m Ω @ 20A, 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

13.5A Ta 80A Tc

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

2090pF @ 30V

Number of Pins :

8

Drain-source On Resistance-Max :

0.012Ohm

Additional Feature :

High Reliability

Mounting Type :

Surface Mount

Case Connection :

DRAIN

Packaging :

Tape and Reel (TR)

Vgs (Max) :

±20V

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs(th) (Max) @ Id :

3V @ 250µA

Power Dissipation-Max :

2.2W Ta 113W Tc

Number of Elements :

1

Drain Current-Max (Abs) (ID) :

13.5A

Published :

2015

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

FET Type :

N-Channel

Terminal Position :

Dual

Transistor Element Material :

SILICON

DS Breakdown Voltage-Min :

60V

Factory Lead Time :

22 Weeks

Mount :

Surface Mount

JESD-30 Code :

R-PDSO-F5

Reference Standard :

AEC-Q101

Drain to Source Voltage (Vdss) :

60V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

80A

Reach Compliance Code :

not_compliant