DMT6010LFG-13
- Mfr.Part #
- DMT6010LFG-13
- Manufacturer
- Diodes Incorporated
- Package / Case
- 8-PowerVDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 13A PWRDI3333
- Stock
- 59,613
- In Stock :
- 59,613
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - FETs, MOSFETs - Single
- ECCN Code :
- EAR99
- Continuous Drain Current (ID) :
- 30A
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 41.3nC @ 10V
- Weight :
- 72.007789mg
- Gate to Source Voltage (Vgs) :
- 20V
- Factory Lead Time :
- 23 Weeks
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- -55°C~150°C TJ
- JESD-609 Code :
- e3
- Vgs (Max) :
- ±20V
- Capacitance :
- 2.09nF
- Current - Continuous Drain (Id) @ 25°C :
- 13A Ta 30A Tc
- Rds On (Max) @ Id, Vgs :
- 7.5m Ω @ 20A, 10V
- Element Configuration :
- Single
- Power Dissipation-Max :
- 2.2W Ta 41W Tc
- Published :
- 2015
- Number of Channels :
- 1
- Fall Time (Typ) :
- 9.7 ns
- Terminal Finish :
- Matte Tin (Sn)
- Mounting Type :
- Surface Mount
- Number of Pins :
- 8
- Packaging :
- Tape and Reel (TR)
- Package / Case :
- 8-PowerVDFN
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- FET Type :
- N-Channel
- Turn-Off Delay Time :
- 23.4 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Input Capacitance (Ciss) (Max) @ Vds :
- 2090pF @ 30V
- Mount :
- Surface Mount
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Drain to Source Breakdown Voltage :
- 60V
- Rise Time :
- 4.3ns
- Turn On Delay Time :
- 5.7 ns
- Datasheets
- DMT6010LFG-13

N-Channel Tape & Reel (TR) 7.5m Ω @ 20A, 10V ±20V 2090pF @ 30V 41.3nC @ 10V 8-PowerVDFN
DMT6010LFG-13 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 2090pF @ 30V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 30A amps.In this device, the drain-source breakdown voltage is 60V and VGS=60V, so the drain-source breakdown voltage is 60V in this case.It is [23.4 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 5.7 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).
DMT6010LFG-13 Features
a continuous drain current (ID) of 30A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 23.4 ns
DMT6010LFG-13 Applications
There are a lot of Diodes Incorporated
DMT6010LFG-13 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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