DMP3085LSD-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Power Dissipation :

1.1W

RoHS Status :

ROHS3 Compliant

Width :

3.95mm

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 10V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

30V

Max Junction Temperature (Tj) :

150°C

Vgs(th) (Max) @ Id :

3V @ 250µA

Number of Elements :

2

Lead Free :

Lead Free

Fall Time (Typ) :

14.6 ns

Peak Reflow Temperature (Cel) :

260

Operating Temperature :

-55°C~150°C TJ

Continuous Drain Current (ID) :

-3.9A

Published :

2013

Input Capacitance (Ciss) (Max) @ Vds :

563pF @ 25V

Number of Pins :

8

Length :

4.95mm

FET Type :

2 P-Channel (Dual)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Additional Feature :

High Reliability

ECCN Code :

EAR99

Packaging :

Digi-Reel®

Mount :

Surface Mount

Number of Channels :

2

REACH SVHC :

No SVHC

FET Feature :

Logic Level Gate

Height :

1.7mm

Current - Continuous Drain (Id) @ 25°C :

3.9A

Number of Terminations :

8

Reference Standard :

AEC-Q101

Transistor Application :

SWITCHING

Terminal Form :

Gull wing

Radiation Hardening :

No

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Rise Time :

5ns

Rds On (Max) @ Id, Vgs :

70m Ω @ 5.3A, 10V

Mounting Type :

Surface Mount

Drain to Source Breakdown Voltage :

-30V

Max Power Dissipation :

1.1W

Drain-source On Resistance-Max :

0.07Ohm

Time@Peak Reflow Temperature-Max (s) :

30

Turn On Delay Time :

4.8 ns

Gate to Source Voltage (Vgs) :

20V

Terminal Finish :

Matte Tin (Sn)

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

Factory Lead Time :

23 Weeks

Turn-Off Delay Time :

31 ns