DMP2200UDW-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mount :

Surface Mount

JESD-30 Code :

R-PDSO-G6

ECCN Code :

EAR99

FET Type :

2 P-Channel (Dual)

Packaging :

Tape and Reel (TR)

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

FET Feature :

Standard

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Mode :

DUAL GATE, ENHANCEMENT MODE

Terminal Finish :

Matte Tin (Sn)

Continuous Drain Current (ID) :

900mA

Drain to Source Voltage (Vdss) :

20V

Gate Charge (Qg) (Max) @ Vgs :

2.1nC @ 4.5V

Terminal Form :

Gull wing

Number of Terminations :

6

Max Power Dissipation :

450mW

Package / Case :

6-TSSOP, SC-88, SOT-363

Rds On (Max) @ Id, Vgs :

260m Ω @ 880mA, 4.5V

Power - Max :

450mW

Drain Current-Max (Abs) (ID) :

0.9A

Input Capacitance (Ciss) (Max) @ Vds :

184pF @ 10V

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

2

Factory Lead Time :

15 Weeks

Drain-source On Resistance-Max :

0.26Ohm

DS Breakdown Voltage-Min :

20V

Operating Temperature :

-55°C~150°C TJ

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Transistor Application :

SWITCHING

Published :

2015

Vgs(th) (Max) @ Id :

1.2V @ 250µA

Transistor Element Material :

SILICON