DMP2002UPS-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

DS Breakdown Voltage-Min :

20V

Current - Continuous Drain (Id) @ 25°C :

60A Tc

Power Dissipation-Max :

2.3W Ta

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

20V

Number of Pins :

8

Input Capacitance (Ciss) (Max) @ Vds :

12826pF @ 10V

Pulsed Drain Current-Max (IDM) :

100A

Continuous Drain Current (ID) :

60A

Number of Terminations :

5

Vgs(th) (Max) @ Id :

1.4V @ 250μA

Terminal Position :

Dual

Mount :

Surface Mount

Reference Standard :

AEC-Q101

Case Connection :

DRAIN

Vgs (Max) :

±12V

Rds On (Max) @ Id, Vgs :

1.9m Ω @ 25A, 10V

Terminal Form :

Flat

ECCN Code :

EAR99

Factory Lead Time :

17 Weeks

Mounting Type :

Surface Mount

FET Type :

P-Channel

Additional Feature :

High Reliability

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 10V

Package / Case :

8-PowerTDFN

Operating Temperature :

-55°C~150°C TJ

Operating Mode :

ENHANCEMENT MODE

Reach Compliance Code :

not_compliant

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Finish :

Matte Tin (Sn)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

0.0019Ohm

JESD-609 Code :

e3

Published :

2015

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

585nC @ 10V

Packaging :

Tape and Reel (TR)

JESD-30 Code :

R-PDSO-F5

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED