DMP2004DWK-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Rds On (Max) @ Id, Vgs :

900m Ω @ 430mA, 4.5V

Lead Free :

Lead Free

Packaging :

Tape and Reel (TR)

Time@Peak Reflow Temperature-Max (s) :

40

Width :

1.35mm

Factory Lead Time :

15 Weeks

RoHS Status :

ROHS3 Compliant

Number of Elements :

2

FET Type :

2 P-Channel (Dual)

Terminal Form :

Gull wing

Gate to Source Voltage (Vgs) :

8V

JESD-609 Code :

e3

Power Dissipation :

250mW

Weight :

6.010099mg

Pin Count :

6

Number of Pins :

6

Continuous Drain Current (ID) :

430mA

REACH SVHC :

No SVHC

Input Capacitance (Ciss) (Max) @ Vds :

175pF @ 16V

Drain Current-Max (Abs) (ID) :

0.43A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Additional Feature :

LOW THRESHOLD

Mount :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Resistance :

900mOhm

Vgs(th) (Max) @ Id :

1V @ 250μA

Length :

2.2mm

FET Feature :

Logic Level Gate

ECCN Code :

EAR99

Terminal Finish :

Matte Tin (Sn)

Peak Reflow Temperature (Cel) :

260

Published :

2011

Pbfree Code :

yes

Number of Terminations :

6

Operating Temperature :

-65°C~150°C TJ

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Height :

1mm

Element Configuration :

Dual

Max Power Dissipation :

250mW

Package / Case :

6-TSSOP, SC-88, SOT-363

Radiation Hardening :

No

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Drain to Source Voltage (Vdss) :

20V