DMP21D0UFD-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

490mW Ta

Factory Lead Time :

17 Weeks

Pin Count :

3

Published :

2011

Gate Charge (Qg) (Max) @ Vgs :

3nC @ 4.5V

Mount :

Surface Mount

Configuration :

SINGLE WITH BUILT-IN DIODE

Turn On Delay Time :

7.1 ns

ECCN Code :

EAR99

Continuous Drain Current (ID) :

820mA

Gate to Source Voltage (Vgs) :

8V

Input Capacitance (Ciss) (Max) @ Vds :

80pF @ 10V

Package / Case :

3-UDFN

Drain to Source Voltage (Vdss) :

20V

Fall Time (Typ) :

18.5 ns

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Vgs (Max) :

±8V

REACH SVHC :

No SVHC

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

40

Turn-Off Delay Time :

31.7 ns

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Number of Terminations :

3

Number of Channels :

1

Packaging :

Tape and Reel (TR)

Number of Pins :

3

FET Type :

P-Channel

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

0.495Ohm

Current - Continuous Drain (Id) @ 25°C :

820mA Ta

Terminal Position :

Dual

Radiation Hardening :

No

Operating Mode :

ENHANCEMENT MODE

Rise Time :

8ns

Rds On (Max) @ Id, Vgs :

495m Ω @ 800mA, 4.5V

Pbfree Code :

yes

Additional Feature :

LOW THRESHOLD

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

JESD-609 Code :

e4

Drain to Source Breakdown Voltage :

-20V

Drive Voltage (Max Rds On,Min Rds On) :

1.5V 4.5V

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

1.2V @ 250µA

Number of Elements :

1