DMP21D0UFB4-7B

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

495m Ω @ 400mA, 4.5V

Operating Temperature :

-55°C~150°C TJ

REACH SVHC :

No SVHC

Drain to Source Voltage (Vdss) :

20V

Vgs (Max) :

±8V

Drain-source On Resistance-Max :

0.4Ohm

Continuous Drain Current (ID) :

1.17A

Rise Time :

8ns

Power Dissipation :

990mW

ECCN Code :

EAR99

Number of Terminations :

3

Drain Current-Max (Abs) (ID) :

0.86A

Pbfree Code :

yes

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Factory Lead Time :

17 Weeks

Number of Pins :

3

Drain to Source Breakdown Voltage :

-20V

Gate Charge (Qg) (Max) @ Vgs :

1.54nC @ 8V

Case Connection :

DRAIN

Element Configuration :

Single

Pin Count :

3

Mount :

Surface Mount

Number of Elements :

1

Number of Channels :

1

Width :

650μm

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

JESD-609 Code :

e4

Peak Reflow Temperature (Cel) :

260

Gate to Source Voltage (Vgs) :

8V

Input Capacitance (Ciss) (Max) @ Vds :

80pF @ 10V

Turn On Delay Time :

7.1 ns

Length :

1.05mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Height :

350μm

Lead Free :

Lead Free

Transistor Application :

SWITCHING

Power Dissipation-Max :

430mW Ta

Current - Continuous Drain (Id) @ 25°C :

770mA Ta

Fall Time (Typ) :

18.5 ns

Packaging :

Tape and Reel (TR)

Package / Case :

3-XFDFN

Mounting Type :

Surface Mount

Contact Plating :

Gold

FET Type :

P-Channel

Vgs(th) (Max) @ Id :

700mV @ 250μA

Operating Mode :

ENHANCEMENT MODE

Published :

2012

Time@Peak Reflow Temperature-Max (s) :

40

Transistor Element Material :

SILICON

Additional Feature :

HIGH RELIABILITY, LOW THRESHOLD

Terminal Position :

BOTTOM

Turn-Off Delay Time :

31.7 ns