DMP2160UFDBQ-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Transistor Element Material :

SILICON

JESD-609 Code :

e4

Continuous Drain Current (ID) :

3.8A

RoHS Status :

ROHS3 Compliant

Number of Elements :

2

Input Capacitance (Ciss) (Max) @ Vds :

536pF @ 10V

FET Type :

2 P-Channel (Dual)

Drain to Source Voltage (Vdss) :

20V

Max Power Dissipation :

1.4W

Drain-source On Resistance-Max :

0.07Ohm

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

70m Ω @ 2.8A, 4.5V

Pulsed Drain Current-Max (IDM) :

13A

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Factory Lead Time :

15 Weeks

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mount :

Surface Mount

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Package / Case :

6-UDFN Exposed Pad

Additional Feature :

High Reliability

Published :

2014

Packaging :

Tape and Reel (TR)

Case Connection :

DRAIN

Terminal Form :

NO LEAD

DS Breakdown Voltage-Min :

20V

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

900mV @ 250μA

Power - Max :

1.4W

JESD-30 Code :

S-PDSO-N6

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Reference Standard :

AEC-Q101

FET Feature :

Standard

Gate Charge (Qg) (Max) @ Vgs :

6.5nC @ 4.5V

Number of Terminations :

6