DMP2160UFDB-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Gate Charge (Qg) (Max) @ Vgs :

6.5nC @ 4.5V

Mounting Type :

Surface Mount

Mount :

Surface Mount

Fall Time (Typ) :

12.09 ns

Drain-source On Resistance-Max :

0.07Ohm

Number of Terminations :

6

Pulsed Drain Current-Max (IDM) :

13A

Pin Count :

6

Input Capacitance (Ciss) (Max) @ Vds :

536pF @ 10V

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

260

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Height :

750μm

Number of Elements :

2

Element Configuration :

Dual

Time@Peak Reflow Temperature-Max (s) :

40

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Factory Lead Time :

6 Weeks

Drain to Source Breakdown Voltage :

-20V

ECCN Code :

EAR99

FET Feature :

Logic Level Gate

Turn-Off Delay Time :

55.34 ns

Rise Time :

12.09ns

REACH SVHC :

No SVHC

Vgs(th) (Max) @ Id :

900mV @ 250μA

Lead Free :

Lead Free

Packaging :

Tape and Reel (TR)

Gate to Source Voltage (Vgs) :

12V

JESD-609 Code :

e4

Pbfree Code :

yes

Length :

2mm

Additional Feature :

High Reliability

FET Type :

2 P-Channel (Dual)

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Rds On (Max) @ Id, Vgs :

70m Ω @ 2.8A, 4.5V

Power Dissipation :

1.4W

Number of Pins :

6

Published :

2012

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Width :

2mm

Package / Case :

6-UDFN Exposed Pad

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

20V

Turn On Delay Time :

11.51 ns

Max Power Dissipation :

1.4W

Continuous Drain Current (ID) :

3.8A