DMP210DUDJ-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Rds On (Max) @ Id, Vgs :

5.5 Ω @ 100mA, 4.5V

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

5Ohm

Continuous Drain Current (ID) :

200mA

Peak Reflow Temperature (Cel) :

260

ECCN Code :

EAR99

Max Power Dissipation :

330mW

Fall Time (Typ) :

31.5 ns

Published :

2012

Input Capacitance (Ciss) (Max) @ Vds :

27.44pF @ 15V

Mount :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Number of Pins :

6

Turn-Off Delay Time :

25.9 ns

Time@Peak Reflow Temperature-Max (s) :

40

Power Dissipation :

330mW

Pbfree Code :

yes

Drain to Source Voltage (Vdss) :

20V

Drain Current-Max (Abs) (ID) :

0.14A

Vgs(th) (Max) @ Id :

1.15V @ 250μA

FET Feature :

Logic Level Gate

Rise Time :

19.3ns

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Turn On Delay Time :

7.7 ns

RoHS Status :

ROHS3 Compliant

Gate to Source Voltage (Vgs) :

8V

Number of Terminations :

6

Terminal Form :

Flat

Pin Count :

6

Number of Elements :

2

Factory Lead Time :

19 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

REACH SVHC :

No SVHC

Package / Case :

SOT-963

Drain to Source Breakdown Voltage :

-20V

FET Type :

2 P-Channel (Dual)

Radiation Hardening :

No

Additional Feature :

HIGH RELIABILITY, LOW THRESHOLD

Element Configuration :

Dual

Operating Mode :

ENHANCEMENT MODE

FET Technology :

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code :

e3

Terminal Finish :

Matte Tin (Sn)