DMP2060UFDB-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Vgs(th) (Max) @ Id :

1.4V @ 250μA

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-30 Code :

S-PDSO-N6

Input Capacitance (Ciss) (Max) @ Vds :

881pF @ 10V

Max Power Dissipation :

1.4W

RoHS Status :

ROHS3 Compliant

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Case Connection :

DRAIN

FET Type :

2 P-Channel (Dual)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

90m Ω @ 2.9A, 4.5V

ECCN Code :

EAR99

Factory Lead Time :

6 Weeks

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Published :

2015

Continuous Drain Current (ID) :

3.2A

Package / Case :

6-UDFN Exposed Pad

Drain to Source Voltage (Vdss) :

20V

Transistor Application :

SWITCHING

Number of Elements :

2

Power - Max :

1.4W

Mount :

Surface Mount

FET Feature :

Standard

Drain-source On Resistance-Max :

0.09Ohm

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 8V

JESD-609 Code :

e4

Terminal Form :

NO LEAD

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Number of Terminations :

6

DS Breakdown Voltage-Min :

20V

Packaging :

Tape and Reel (TR)