DMP2035UTS-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Gate Charge (Qg) (Max) @ Vgs :

15.4nC @ 4.5V

Power Dissipation :

890mW

Turn-Off Delay Time :

94.1 ns

Vgs(th) (Max) @ Id :

1V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds :

1610pF @ 10V

Pin Count :

8

JESD-609 Code :

e3

FET Feature :

Logic Level Gate

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Operating Temperature :

-55°C~150°C TJ

Terminal Finish :

Matte Tin (Sn)

FET Type :

2 P-Channel (Dual) Common Drain

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

260

ECCN Code :

EAR99

Rise Time :

12.4ns

Radiation Hardening :

No

Base Part Number :

DMP2035UTS

Number of Pins :

8

Fall Time (Typ) :

42.4 ns

Factory Lead Time :

15 Weeks

Max Power Dissipation :

890mW

Continuous Drain Current (ID) :

6.04A

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

2

Published :

2010

Transistor Application :

SWITCHING

Drain to Source Breakdown Voltage :

-20V

Time@Peak Reflow Temperature-Max (s) :

40

Number of Terminations :

8

Mount :

Surface Mount

Turn On Delay Time :

16.8 ns

REACH SVHC :

No SVHC

Weight :

157.991892mg

Additional Feature :

High Reliability

Drain-source On Resistance-Max :

0.045Ohm

Drain to Source Voltage (Vdss) :

20V

Package / Case :

8-TSSOP (0.173, 4.40mm Width)

Rds On (Max) @ Id, Vgs :

35m Ω @ 4A, 4.5V

Terminal Form :

Gull wing

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Gate to Source Voltage (Vgs) :

8V