DMP2007UFG-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

P-Channel

Vgs(th) (Max) @ Id :

1.3V @ 250µA

Power Dissipation-Max :

2.3W Ta

Factory Lead Time :

17 Weeks

Terminal Finish :

Matte Tin (Sn) - annealed

DS Breakdown Voltage-Min :

20V

Input Capacitance (Ciss) (Max) @ Vds :

4621pF @ 10V

Published :

2007

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 10V

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

18A Ta 40A Tc

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

5.5m Ω @ 15A, 10V

Mounting Type :

Surface Mount

Terminal Form :

NO LEAD

Package / Case :

8-PowerVDFN

Continuous Drain Current (ID) :

40A

Terminal Position :

Dual

Transistor Application :

SWITCHING

Configuration :

SINGLE WITH BUILT-IN DIODE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±12V

Drain-source On Resistance-Max :

0.007Ohm

JESD-30 Code :

S-PDSO-N5

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Avalanche Energy Rating (Eas) :

50 mJ

Number of Terminations :

5

Operating Mode :

ENHANCEMENT MODE

Number of Pins :

8

Case Connection :

DRAIN

Drain to Source Voltage (Vdss) :

20V

Number of Elements :

1

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

85nC @ 10V