DMP1046UFDB-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

17.9nC @ 8V

FET Feature :

Standard

Mount :

Surface Mount

Published :

2015

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

DS Breakdown Voltage-Min :

12V

Number of Pins :

6

Rds On (Max) @ Id, Vgs :

61m Ω @ 3.6A, 4.5V

FET Type :

2 P-Channel (Dual)

Drain to Source Voltage (Vdss) :

12V

ECCN Code :

EAR99

Max Power Dissipation :

1.4W

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

8V

JESD-609 Code :

e4

Number of Elements :

2

Packaging :

Tape and Reel (TR)

Rise Time :

11.5ns

Package / Case :

6-UDFN Exposed Pad

Continuous Drain Current (ID) :

3.8A

Terminal Form :

NO LEAD

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

Turn-Off Delay Time :

27.8 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Contact Plating :

Gold

Case Connection :

DRAIN

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

915pF @ 6V

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

Turn On Delay Time :

5.7 ns

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Number of Terminations :

6

Fall Time (Typ) :

26.4 ns

Factory Lead Time :

15 Weeks

Vgs(th) (Max) @ Id :

1V @ 250μA