DMP1009UFDF-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

1V @ 250μA

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

2W Ta

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

11m Ω @ 5A, 4.5V

Drain to Source Voltage (Vdss) :

12V

Time@Peak Reflow Temperature-Max (s) :

30

Terminal Position :

Dual

Terminal Form :

NO LEAD

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Number of Elements :

1

DS Breakdown Voltage-Min :

12V

Case Connection :

DRAIN

JESD-30 Code :

S-PDSO-N6

Surface Mount :

yes

Operating Temperature :

-55°C~150°C TJ

JESD-609 Code :

e4

Transistor Application :

SWITCHING

FET Type :

P-Channel

Input Capacitance (Ciss) (Max) @ Vds :

1860pF @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±8V

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Number of Terminations :

6

Current - Continuous Drain (Id) @ 25°C :

15A Ta

Factory Lead Time :

17 Weeks

Gate Charge (Qg) (Max) @ Vgs :

44nC @ 8V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

0.014Ohm

Drain Current-Max (Abs) (ID) :

11A

Packaging :

Tape and Reel (TR)

Package / Case :

6-UDFN Exposed Pad

Configuration :

SINGLE WITH BUILT-IN DIODE

Peak Reflow Temperature (Cel) :

260