DMP1005UFDF-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

1V @ 250μA

JESD-609 Code :

e4

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

DS Breakdown Voltage-Min :

12V

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

47nC @ 8V

Power Dissipation-Max :

2.1W Ta

Factory Lead Time :

18 Weeks

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~150°C TJ

Drain to Source Voltage (Vdss) :

12V

Package / Case :

6-UDFN Exposed Pad

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

26A Tc

Input Capacitance (Ciss) (Max) @ Vds :

2475pF @ 6V

Mounting Type :

Surface Mount

Drain-source On Resistance-Max :

0.0085Ohm

Terminal Form :

NO LEAD

Surface Mount :

yes

Terminal Position :

Dual

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Peak Reflow Temperature (Cel) :

260

Vgs (Max) :

±8V

Case Connection :

DRAIN

Packaging :

Tape and Reel (TR)

Number of Terminations :

6

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

30

FET Type :

P-Channel

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

8.5m Ω @ 5A, 4.5V

JESD-30 Code :

S-PDSO-N6

Drain Current-Max (Abs) (ID) :

12.8A