DMN33D9LV-7A
- Mfr.Part #
- DMN33D9LV-7A
- Manufacturer
- Diodes Incorporated
- Package / Case
- SOT-563, SOT-666
- Datasheet
- Download
- Description
- MOSFET BVDSS: 25V~30V SOT563 T&R
- Stock
- 14,654
- In Stock :
- 14,654
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Surface Mount :
- yes
- FET Type :
- 2 N-Channel (Dual)
- Transistor Application :
- SWITCHING
- Gate Charge (Qg) (Max) @ Vgs :
- 1.23nC @ 10V
- Subcategory :
- MOSFETs
- Reach Compliance Code :
- Unknown
- Package :
- Tape and Reel (TR)
- Product Status :
- Active
- Minimum Operating Temperature :
- - 55 C
- Terminal Position :
- Dual
- Operating Mode :
- ENHANCEMENT MODE
- Package Shape :
- RECTANGULAR
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- JESD-30 Code :
- R-PDSO-F6
- Drain-source On Resistance-Max :
- 0.0024 Ω
- Supplier Device Package :
- SOT-563
- Technology :
- Si
- Number of Terminals :
- 6
- Number of Elements :
- 2
- Polarity/Channel Type :
- N-Channel
- Configuration :
- Dual
- Channel Mode :
- Enhancement
- Vgs(th) (Max) @ Id :
- 1.4V @ 100μA
- Product Type :
- MOSFET
- Factory Lead Time :
- 16 Weeks
- Current - Continuous Drain (Id) @ 25°C :
- 350mA (Ta)
- Mounting Style :
- SMD/SMT
- Transistor Type :
- 2 N-Channel
- Transistor Polarity :
- N Channel
- Power - Max :
- 430mW (Ta)
- Qualification :
- -
- Terminal Form :
- Flat
- MSL :
- MSL 1 - Unlimited
- Maximum Operating Temperature :
- + 150 C
- Number of Channels :
- 2 Channel
- Rise Time :
- 2.6 ns
- Continuous Drain Current Id :
- 350mA
- Input Capacitance (Ciss) (Max) @ Vds :
- 48pF @ 5V
- FET Feature :
- Standard
- Brand :
- Diodes Incorporated
- Package / Case :
- SOT-563, SOT-666
- Rds On (Max) @ Id, Vgs :
- 2.4Ohm @ 250mA, 10V
- Manufacturer :
- Diodes Incorporated
- Power Dissipation-Max (Abs) :
- 0.43 W
- Transistor Element Material :
- SILICON
- Feedback Cap-Max (Crss) :
- 8 pF
- Packaging :
- Cut Tape
- Series :
- -
- Drain to Source Voltage (Vdss) :
- 30V
- Mounting Type :
- Surface Mount
- Channel Type :
- N Channel
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Product Category :
- MOSFET
- DS Breakdown Voltage-Min :
- 30 V
- Datasheets
- DMN33D9LV-7A
DMN33D9LV-7A Documents

DMN33D9LV-7A datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Diodes Incorporated stock available at
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