DMN32D2LV-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Rds On (Max) @ Id, Vgs :

1.2 Ω @ 100mA, 4V

Max Power Dissipation :

400mW

ECCN Code :

EAR99

Continuous Drain Current (ID) :

400mA

Mount :

Surface Mount

Mounting Type :

Surface Mount

Published :

2012

Number of Terminations :

6

REACH SVHC :

No SVHC

Height :

600μm

Transistor Element Material :

SILICON

Terminal Finish :

Matte Tin (Sn)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Channels :

2

Drain Current-Max (Abs) (ID) :

0.4A

Vgs(th) (Max) @ Id :

1.2V @ 250µA

Input Capacitance (Ciss) (Max) @ Vds :

39pF @ 3V

Pbfree Code :

yes

Time@Peak Reflow Temperature-Max (s) :

40

JESD-30 Code :

R-PDSO-F6

Package / Case :

SOT-563, SOT-666

Pin Count :

6

Peak Reflow Temperature (Cel) :

260

Transistor Application :

SWITCHING

Terminal Form :

Flat

JESD-609 Code :

e3

Operating Temperature :

-55°C~150°C TJ

Length :

1.6mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

2 N-Channel (Dual)

Gate to Source Voltage (Vgs) :

10V

Radiation Hardening :

No

FET Feature :

Logic Level Gate

Base Part Number :

DMN32D2LV

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

30V

Number of Elements :

2

Weight :

3.005049mg

Width :

1.2mm

Factory Lead Time :

16 Weeks

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

30V

Element Configuration :

Dual