DMN3190LDW-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Input Capacitance (Ciss) (Max) @ Vds :

87pF @ 20V

Drain-source On Resistance-Max :

0.19Ohm

Rise Time :

8.9ns

Mount :

Surface Mount

RoHS Status :

ROHS3 Compliant

FET Type :

2 N-Channel (Dual)

JESD-609 Code :

e3

Drain to Source Voltage (Vdss) :

30V

Number of Elements :

2

Operating Temperature :

-55°C~150°C TJ

Pin Count :

6

Turn-Off Delay Time :

30.3 ns

Rds On (Max) @ Id, Vgs :

190m Ω @ 1.3A, 10V

Drain Current-Max (Abs) (ID) :

1A

Width :

1.35mm

DS Breakdown Voltage-Min :

30V

Fall Time (Typ) :

15.6 ns

Turn On Delay Time :

4.5 ns

Transistor Element Material :

SILICON

Number of Pins :

6

Mounting Type :

Surface Mount

Number of Terminations :

6

Height :

1mm

Number of Channels :

2

ECCN Code :

EAR99

Published :

2013

Continuous Drain Current (ID) :

1A

Factory Lead Time :

15 Weeks

Additional Feature :

High Reliability

Element Configuration :

Dual

Vgs(th) (Max) @ Id :

2.8V @ 250μA

Length :

2.2mm

Pbfree Code :

yes

Weight :

6.010099mg

Gate Charge (Qg) (Max) @ Vgs :

2nC @ 10V

Radiation Hardening :

No

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Gull wing

Terminal Finish :

Matte Tin (Sn)

Lead Free :

Lead Free

Max Power Dissipation :

320mW

Package / Case :

6-TSSOP, SC-88, SOT-363

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Feature :

Logic Level Gate

Packaging :

Tape and Reel (TR)

Gate to Source Voltage (Vgs) :

20V

Reference Standard :

AEC-Q101

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

260