DMN3190LDW-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Time@Peak Reflow Temperature-Max (s) :

30

Rise Time :

8.9ns

Drain Current-Max (Abs) (ID) :

1A

Length :

2.2mm

Factory Lead Time :

15 Weeks

Continuous Drain Current (ID) :

1A

RoHS Status :

ROHS3 Compliant

Height :

1mm

Additional Feature :

High Reliability

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

30V

Turn On Delay Time :

4.5 ns

Mounting Type :

Surface Mount

Number of Elements :

2

Package / Case :

6-TSSOP, SC-88, SOT-363

Radiation Hardening :

No

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

87pF @ 20V

Fall Time (Typ) :

15.6 ns

DS Breakdown Voltage-Min :

30V

Number of Terminations :

6

Pin Count :

6

Rds On (Max) @ Id, Vgs :

190m Ω @ 1.3A, 10V

Width :

1.35mm

Peak Reflow Temperature (Cel) :

260

Mount :

Surface Mount

Packaging :

Tape and Reel (TR)

Terminal Form :

Gull wing

Operating Mode :

ENHANCEMENT MODE

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Drain-source On Resistance-Max :

0.19Ohm

Vgs(th) (Max) @ Id :

2.8V @ 250μA

FET Type :

2 N-Channel (Dual)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

FET Feature :

Logic Level Gate

Gate to Source Voltage (Vgs) :

20V

Terminal Finish :

Matte Tin (Sn)

Gate Charge (Qg) (Max) @ Vgs :

2nC @ 10V

Reference Standard :

AEC-Q101

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

6

Max Power Dissipation :

320mW

Operating Temperature :

-55°C~150°C TJ

JESD-609 Code :

e3

Published :

2013

Turn-Off Delay Time :

30.3 ns