DMN3190LDW-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Pin Count :

6

Drain to Source Voltage (Vdss) :

30V

Factory Lead Time :

15 Weeks

Width :

1.35mm

ECCN Code :

EAR99

Length :

2.2mm

Drain Current-Max (Abs) (ID) :

1A

Drain-source On Resistance-Max :

0.19Ohm

Turn On Delay Time :

4.5 ns

Time@Peak Reflow Temperature-Max (s) :

30

Vgs(th) (Max) @ Id :

2.8V @ 250μA

Peak Reflow Temperature (Cel) :

260

Terminal Finish :

Matte Tin (Sn)

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

87pF @ 20V

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Radiation Hardening :

No

Height :

1mm

Fall Time (Typ) :

15.6 ns

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Continuous Drain Current (ID) :

1A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

FET Type :

2 N-Channel (Dual)

Number of Pins :

6

Rise Time :

8.9ns

Number of Terminations :

6

Terminal Form :

Gull wing

Gate Charge (Qg) (Max) @ Vgs :

2nC @ 10V

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Number of Elements :

2

Mounting Type :

Surface Mount

Reference Standard :

AEC-Q101

Additional Feature :

High Reliability

Mount :

Surface Mount

Max Power Dissipation :

320mW

Published :

2013

Rds On (Max) @ Id, Vgs :

190m Ω @ 1.3A, 10V

FET Feature :

Logic Level Gate

Package / Case :

6-TSSOP, SC-88, SOT-363

Turn-Off Delay Time :

30.3 ns

Gate to Source Voltage (Vgs) :

20V

DS Breakdown Voltage-Min :

30V

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE