DMN3035LWN-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

2V @ 250μA

Case Connection :

DRAIN

Published :

2016

FET Type :

2 N-Channel (Dual)

JESD-30 Code :

R-PDSO-N6

Drain Current-Max (Abs) (ID) :

5.5A

JESD-609 Code :

e4

RoHS Status :

ROHS3 Compliant

DS Breakdown Voltage-Min :

30V

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Terminations :

6

FET Feature :

Standard

Drain-source On Resistance-Max :

0.035Ohm

Current - Continuous Drain (Id) @ 25°C :

5.5A Ta

Input Capacitance (Ciss) (Max) @ Vds :

399pF @ 15V

Operating Temperature :

-55°C~150°C TJ

Package / Case :

8-PowerVDFN

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Form :

NO LEAD

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

4.5nC @ 4.5V

Factory Lead Time :

14 Weeks

ECCN Code :

EAR99

Number of Elements :

2

Surface Mount :

yes

Rds On (Max) @ Id, Vgs :

35m Ω @ 4.8A, 10V

Operating Mode :

ENHANCEMENT MODE