DMN3032LFDBQ-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Max Power Dissipation :

1W

FET Type :

2 N-Channel (Dual)

Operating Temperature :

-55°C~150°C TJ

FET Technology :

METAL-OXIDE SEMICONDUCTOR

RoHS Status :

ROHS3 Compliant

DS Breakdown Voltage-Min :

30V

Mount :

Surface Mount

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Published :

2015

Factory Lead Time :

23 Weeks

Vgs(th) (Max) @ Id :

2V @ 250μA

Continuous Drain Current (ID) :

6.2A

Number of Elements :

2

Package / Case :

6-UDFN Exposed Pad

Case Connection :

DRAIN

Packaging :

Tape and Reel (TR)

Additional Feature :

High Reliability

Power - Max :

1W

Terminal Form :

NO LEAD

Drain to Source Voltage (Vdss) :

30V

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Drain-source On Resistance-Max :

0.03Ohm

Gate Charge (Qg) (Max) @ Vgs :

10.6nC @ 10V

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

30m Ω @ 5.8A, 10V

Number of Terminations :

6

Input Capacitance (Ciss) (Max) @ Vds :

500pF @ 15V

Reference Standard :

AEC-Q101

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

FET Feature :

Standard

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

JESD-30 Code :

S-PDSO-N6

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

ECCN Code :

EAR99

Transistor Element Material :

SILICON

JESD-609 Code :

e4