DMN3018SSD-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Rise Time :

4.4ns

Pulsed Drain Current-Max (IDM) :

60A

Mounting Type :

Surface Mount

FET Type :

2 N-Channel (Dual)

Packaging :

Tape and Reel (TR)

Max Power Dissipation :

1.5W

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

30V

Number of Channels :

2

Factory Lead Time :

15 Weeks

Width :

3.95mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

697pF @ 15V

Number of Terminations :

8

Rds On (Max) @ Id, Vgs :

22m Ω @ 10A, 10V

Gate Charge (Qg) (Max) @ Vgs :

13.2nC @ 10V

Time@Peak Reflow Temperature-Max (s) :

40

Element Configuration :

Single

Height :

1.5mm

REACH SVHC :

No SVHC

Operating Temperature :

-55°C~150°C TJ

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Form :

Gull wing

Transistor Application :

SWITCHING

Length :

4.95mm

JESD-609 Code :

e3

Additional Feature :

High Reliability

Reference Standard :

AEC-Q101

Mount :

Surface Mount

Number of Pins :

8

Peak Reflow Temperature (Cel) :

260

Turn-Off Delay Time :

20.1 ns

Pbfree Code :

yes

FET Feature :

Logic Level Gate

Continuous Drain Current (ID) :

6.7A

Published :

2013

Fall Time (Typ) :

4.1 ns

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Number of Elements :

2

Weight :

73.992255mg

Vgs(th) (Max) @ Id :

2.1V @ 250μA

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Terminal Finish :

Matte Tin (Sn)

Turn On Delay Time :

4.3 ns

Gate to Source Voltage (Vgs) :

20V

Drain to Source Breakdown Voltage :

30V

ECCN Code :

EAR99