DMG1024UV-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Weight :

3.005049mg

Pin Count :

6

Continuous Drain Current (ID) :

1.38A

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Length :

1.7mm

Height :

600μm

Terminal Form :

Flat

Turn-Off Delay Time :

26.7 ns

Turn On Delay Time :

5.1 ns

Published :

2010

Pbfree Code :

yes

Rds On (Max) @ Id, Vgs :

450m Ω @ 600mA, 4.5V

Peak Reflow Temperature (Cel) :

260

Element Configuration :

Dual

Transistor Element Material :

SILICON

Resistance :

10Ohm

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

FET Feature :

Logic Level Gate

Operating Temperature :

-55°C~150°C TJ

Drain to Source Breakdown Voltage :

20V

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

40

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

2

Radiation Hardening :

No

Additional Feature :

LOW THRESHOLD

Max Power Dissipation :

530mW

Power Dissipation :

530mW

Factory Lead Time :

15 Weeks

REACH SVHC :

No SVHC

Fall Time (Typ) :

12.3 ns

Rise Time :

7.4ns

Mount :

Surface Mount

Mounting Type :

Surface Mount

Number of Terminations :

6

ECCN Code :

EAR99

JESD-609 Code :

e3

Drain Current-Max (Abs) (ID) :

1.39A

Width :

1.25mm

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

6V

Base Part Number :

DMG1024UV

Packaging :

Tape and Reel (TR)

Terminal Finish :

Matte Tin (Sn)

Number of Pins :

6

Drain to Source Voltage (Vdss) :

20V

Vgs(th) (Max) @ Id :

1V @ 250μA

Package / Case :

SOT-563, SOT-666

Gate Charge (Qg) (Max) @ Vgs :

0.74nC @ 4.5V

FET Type :

2 N-Channel (Dual)

Input Capacitance (Ciss) (Max) @ Vds :

60.67pF @ 16V