DMG1013T-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Additional Feature :

High Reliability

Mount :

Surface Mount

JESD-609 Code :

e3

Continuous Drain Current (ID) :

-460mA

Length :

1.7mm

Radiation Hardening :

No

Threshold Voltage :

-1V

Factory Lead Time :

14 Weeks

Terminal Position :

Dual

Terminal Form :

Gull wing

Number of Channels :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain Current-Max (Abs) (ID) :

0.46A

Input Capacitance (Ciss) (Max) @ Vds :

59.76pF @ 16V

Power Dissipation-Max :

270mW Ta

Height :

900μm

Rise Time :

8.1ns

Published :

2009

Element Configuration :

Single

Weight :

2.012816mg

Turn On Delay Time :

5.1 ns

Rds On (Max) @ Id, Vgs :

700m Ω @ 350mA, 4.5V

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

6V

Number of Pins :

3

Mounting Type :

Surface Mount

REACH SVHC :

No SVHC

Vgs(th) (Max) @ Id :

1V @ 250μA

Number of Elements :

1

Package / Case :

SOT-523

Transistor Element Material :

SILICON

Width :

850μm

Number of Terminations :

3

Resistance :

700mOhm

Power Dissipation :

270mW

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Current - Continuous Drain (Id) @ 25°C :

460mA Ta

Drain to Source Voltage (Vdss) :

20V

Pbfree Code :

yes

Operating Mode :

ENHANCEMENT MODE

Contact Plating :

Tin

Drain to Source Breakdown Voltage :

-20V

Turn-Off Delay Time :

28.4 ns

Vgs (Max) :

±6V

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

0.622nC @ 4.5V

Max Junction Temperature (Tj) :

150°C

Fall Time (Typ) :

20.7 ns

FET Type :

P-Channel

Time@Peak Reflow Temperature-Max (s) :

40

Operating Temperature :

-55°C~150°C TJ

Lead Free :

Lead Free

Pin Count :

3

Peak Reflow Temperature (Cel) :

260

Packaging :

Tape and Reel (TR)