DMG1016V-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

0.74nC @ 4.5V

FET Feature :

Logic Level Gate

Published :

2009

Operating Temperature :

-55°C~150°C TJ

Max Power Dissipation :

530mW

Gate to Source Voltage (Vgs) :

6V

Mounting Type :

Surface Mount

Radiation Hardening :

No

Length :

1.7mm

Package / Case :

SOT-563, SOT-666

Width :

1.25mm

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

60.67pF @ 16V

Rds On (Max) @ Id, Vgs :

400m Ω @ 600mA, 4.5V

Pbfree Code :

yes

Continuous Drain Current (ID) :

640mA

Height :

600μm

Drain Current-Max (Abs) (ID) :

0.87A

REACH SVHC :

No SVHC

Transistor Element Material :

SILICON

Number of Terminations :

6

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Reference Standard :

AEC-Q101

Base Part Number :

DMG1016V

Power Dissipation :

530mW

Lead Free :

Lead Free

Terminal Form :

Flat

Weight :

3.005049mg

Terminal Position :

Dual

FET Type :

N and P-Channel

Mount :

Surface Mount

Rise Time :

8.1ns

Drain to Source Voltage (Vdss) :

20V

Operating Mode :

ENHANCEMENT MODE

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Terminal Finish :

Matte Tin (Sn)

Number of Pins :

6

Vgs(th) (Max) @ Id :

1V @ 250μA

RoHS Status :

ROHS3 Compliant

Turn-Off Delay Time :

28.4 ns

JESD-609 Code :

e3

Factory Lead Time :

15 Weeks

Threshold Voltage :

1V

Packaging :

Cut Tape (CT)

Turn On Delay Time :

5.1 ns

Number of Elements :

2

Current - Continuous Drain (Id) @ 25°C :

870mA 640mA

Pin Count :

6

Additional Feature :

High Reliability

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Resistance :

700mOhm

Fall Time (Typ) :

20.7 ns