DMC3400SDW-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Number of Channels :

2

Transistor Element Material :

SILICON

FET Type :

N and P-Channel

Mounting Type :

Surface Mount

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Gate to Source Voltage (Vgs) :

20V

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

30V

Drain Current-Max (Abs) (ID) :

0.65A

Max Junction Temperature (Tj) :

150°C

Terminal Finish :

Matte Tin (Sn)

Drain-source On Resistance-Max :

0.4Ohm

Max Power Dissipation :

310mW

Input Capacitance (Ciss) (Max) @ Vds :

55pF @ 15V

Height :

1.1mm

Published :

2015

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

1.4nC @ 10V

Time@Peak Reflow Temperature-Max (s) :

30

FET Feature :

Standard

ECCN Code :

EAR99

Mount :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

450mA

Power Dissipation :

310mW

Peak Reflow Temperature (Cel) :

260

Rds On (Max) @ Id, Vgs :

400m Ω @ 590mA, 10V

Terminal Position :

Dual

Vgs(th) (Max) @ Id :

1.6V @ 250μA

Number of Elements :

2

DS Breakdown Voltage-Min :

30V

Number of Terminations :

6

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Current - Continuous Drain (Id) @ 25°C :

650mA 450mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PDSO-G6

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Form :

Gull wing

Package / Case :

6-TSSOP, SC-88, SOT-363

Factory Lead Time :

15 Weeks