DMC3060LVT-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Type :

N and P-Channel Complementary

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Terminal Position :

Dual

Power - Max :

830mW

Terminal Form :

Gull wing

Surface Mount :

yes

Number of Elements :

2

Drain-source On Resistance-Max :

0.06Ohm

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Operating Temperature :

-55°C~150°C TJ

Drain Current-Max (Abs) (ID) :

3.6A

DS Breakdown Voltage-Min :

30V

Rds On (Max) @ Id, Vgs :

60m Ω @ 3.1A, 10V, 95m Ω @ 2.7A, 10V

Packaging :

Tape and Reel (TR)

Configuration :

SEPARATE, 2 ELEMENTS

Terminal Finish :

Matte Tin (Sn)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

22 Weeks

Gate Charge (Qg) (Max) @ Vgs :

11.3nC @ 10V

Number of Terminations :

6

JESD-30 Code :

R-PDSO-G6

Vgs(th) (Max) @ Id :

1.8V @ 250μA, 2.1V @ 250μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

395pF 324pF @ 15V

Transistor Application :

SWITCHING

JESD-609 Code :

e3

FET Feature :

Standard

Drain to Source Voltage (Vdss) :

30V

Power Dissipation-Max (Abs) :

1.16W

Current - Continuous Drain (Id) @ 25°C :

3.6A Ta 2.8A Ta